No. |
Part Name |
Description |
Manufacturer |
3691 |
MJE340 |
300 V, 500 A, NPN epitaxial silicon transistor |
Samsung Electronic |
3692 |
MJE340STU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
3693 |
MJE520 |
NPN Epitaxial Power Transistor |
National Semiconductor |
3694 |
MJE521 |
NPN Epitaxial Power Transistor |
National Semiconductor |
3695 |
MJE700 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
3696 |
MJE701 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
3697 |
MJE702 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
3698 |
MJE703 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
3699 |
MJE800 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
3700 |
MJE800 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
3701 |
MJE800STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
3702 |
MJE801 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
3703 |
MJE801 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
3704 |
MJE801STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
3705 |
MJE802 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
3706 |
MJE802 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
3707 |
MJE802STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
3708 |
MJE803 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
3709 |
MJE803 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
3710 |
MJE803STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
3711 |
MMBC1622D8 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
3712 |
MMBC1623L6 |
50 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
3713 |
MMBT2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
3714 |
MMBT4124 |
30 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
3715 |
MMBT5088 |
35 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
3716 |
MMBT5089 |
30 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
3717 |
MMBT5550 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
3718 |
MMBT5550 |
160 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
3719 |
MMBT6427 |
40 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
3720 |
MMBT6428 |
60 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
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