| No. |
Part Name |
Description |
Manufacturer |
| 3721 |
BAX82 |
Glass passivated silicon switching diode of the latest technology for high currents, color code gray-red-none |
Texas Instruments |
| 3722 |
BAY17 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3723 |
BAY18 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3724 |
BAY19 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3725 |
BAY20 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3726 |
BAY21 |
Glass Passivated Silicon Diode for general purpose application |
Texas Instruments |
| 3727 |
BBY33BB-2 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
| 3728 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3729 |
BCR08AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 3730 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3731 |
BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 3732 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3733 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3734 |
BCR10CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 3735 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3736 |
BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3737 |
BCR12 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3738 |
BCR12CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3739 |
BCR12CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3740 |
BCR12CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 3741 |
BCR12KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3742 |
BCR12PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3743 |
BCR12PM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3744 |
BCR12UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3745 |
BCR16CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3746 |
BCR16CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3747 |
BCR16CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 3748 |
BCR16HM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3749 |
BCR16PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3750 |
BCR16UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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