| No. |
Part Name |
Description |
Manufacturer |
| 3721 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 3722 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 3723 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 3724 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 3725 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 3726 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3727 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3728 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 3729 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3730 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3731 |
82931-55N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3732 |
82931-55S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3733 |
83000 |
3.0GHz 0.5W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 3734 |
83001 |
3.0GHz 1.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 3735 |
83135-3 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 3736 |
8339 |
15KV ESD PROTECTED/ LOW POWER RS-485/RS-422 TRANSCEIVER |
ST Microelectronics |
| 3737 |
8785 |
��15KV ESD-PROTECTED, 1mA, 3 TO 5.5V, 250KBPS, RS-232 TRANSCEIVER WITH STAND-BY |
ST Microelectronics |
| 3738 |
87C257 |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 3739 |
9202 |
Flash Programmable System Devices with 8032 Microcontroller Core |
ST Microelectronics |
| 3740 |
93C56 |
2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM |
ST Microelectronics |
| 3741 |
93CS46 |
1K 64 x 16 SERIAL MICROWIRE EEPROM |
ST Microelectronics |
| 3742 |
9474 |
POWER SCHOTTKY RECTIFIER |
ST Microelectronics |
| 3743 |
95P04 |
SERIAL ACCESS SPI BUS 4K 512 x 8 EEPROM |
ST Microelectronics |
| 3744 |
9639 |
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET POWER MOSFET |
ST Microelectronics |
| 3745 |
9858 |
N-CHANNEL 7A - 600V - TO-220FP PowerMESH IGBT |
ST Microelectronics |
| 3746 |
A1015 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 3747 |
A21SP16 |
3 W filter-free class-D audio power amplifier |
ST Microelectronics |
| 3748 |
A21SP16J |
3 W filter-free class-D audio power amplifier |
ST Microelectronics |
| 3749 |
A22H165 |
High-performance class-G stereo headphone amplifier |
ST Microelectronics |
| 3750 |
A22H165J |
High-performance class-G stereo headphone amplifier |
ST Microelectronics |
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