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Datasheets for DYN

Datasheets found :: 9832
Page: | 122 | 123 | 124 | 125 | 126 | 127 | 128 | 129 | 130 |
No. Part Name Description Manufacturer
3751 KM416V1200BJL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
3752 KM416V1200BJL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
3753 KM416V1200BJL-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic
3754 KM416V1200BT-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
3755 KM416V1200BT-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
3756 KM416V1200BT-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic
3757 KM416V1200BTL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
3758 KM416V1200BTL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
3759 KM416V1200BTL-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic
3760 KM416V1200C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
3761 KM416V1200CJ-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
3762 KM416V1200CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
3763 KM416V1200CJL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
3764 KM416V1200CJL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
3765 KM416V1200CT-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
3766 KM416V1200CT-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
3767 KM416V1200CTL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
3768 KM416V1200CTL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
3769 KM416V1204BJ 1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT Samsung Electronic
3770 KM416V1204C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
3771 KM416V1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
3772 KM416V1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms Samsung Electronic
3773 KM416V1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
3774 KM416V1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
3775 KM416V1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
3776 KM416V1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
3777 KM416V1204CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
3778 KM416V1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms Samsung Electronic
3779 KM416V1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
3780 KM416V1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic


Datasheets found :: 9832
Page: | 122 | 123 | 124 | 125 | 126 | 127 | 128 | 129 | 130 |



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