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Datasheets for E FOR

Datasheets found :: 7514
Page: | 122 | 123 | 124 | 125 | 126 | 127 | 128 | 129 | 130 |
No. Part Name Description Manufacturer
3751 NTE6002 Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. NTE Electronics
3752 NTE6003 Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. NTE Electronics
3753 NTE6004 Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. NTE Electronics
3754 NTE6021 Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 50V. Max average forward current 60A. NTE Electronics
3755 NTE6022 Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 100V. Max average forward current 60A. NTE Electronics
3756 NTE6023 Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 100V. Max average forward current 60A. NTE Electronics
3757 NTE6026 Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 200V. Max average forward current 60A. NTE Electronics
3758 NTE6027 Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 200V. Max average forward current 60A. NTE Electronics
3759 NTE6030 Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 300V. Max average forward current 60A. NTE Electronics
3760 NTE6031 Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 300V. Max average forward current 60A. NTE Electronics
3761 NTE6034 Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 400V. Max average forward current 60A. NTE Electronics
3762 NTE6035 Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 400V. Max average forward current 60A. NTE Electronics
3763 NTE6038 Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 500V. Max average forward current 60A. NTE Electronics
3764 NTE6039 Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 500V. Max average forward current 60A. NTE Electronics
3765 NTE6040 Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 600V. Max average forward current 60A. NTE Electronics
3766 NTE6041 Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 600V. Max average forward current 60A. NTE Electronics
3767 NTE6042 Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 800V. Max average forward current 60A. NTE Electronics
3768 NTE6043 Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 800V. Max average forward current 60A. NTE Electronics
3769 NTE6044 Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 1000V. Max average forward current 60A. NTE Electronics
3770 NTE618 Varactor Silicon Tuning Diode for AM Radio NTE Electronics
3771 NTE6202 Positive center tapped silicon rectifier, standard recovery. Peak repetitive reverse voltage 400V. Average forward current(per diode) 15A. NTE Electronics
3772 NTE6206 Positive center tapped silicon rectifier, fast recovery. Peak repetitive reverse voltage 200V. Average forward current(per diode) 15A. NTE Electronics
3773 NTE6208 Positive center tapped silicon rectifier, fast recovery. Peak repetitive reverse voltage 400V. Average forward current(per diode) 15A. NTE Electronics
3774 NTE65 Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV NTE Electronics
3775 NTE7019 Integrated Circuit Digital Tuning System Interface for TV Systems NTE Electronics
3776 NX5302EH 1310 nm InGaAsP MQW FP laser diode for fiber optic communications. NEC
3777 NX5302EI 1310 nm InGaAsP MQW FP laser diode for fiber optic communications. NEC
3778 NX5302EJ 1310 nm InGaAsP MQW FP laser diode for fiber optic communications. NEC
3779 NX5302EK 1310 nm InGaAsP MQW FP laser diode for fiber optic communications. NEC
3780 NX5302SH 1301 nm InGaAsP MQW FP laser diode for fiber optic communications. NEC


Datasheets found :: 7514
Page: | 122 | 123 | 124 | 125 | 126 | 127 | 128 | 129 | 130 |



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