| No. |
Part Name |
Description |
Manufacturer |
| 3751 |
2SC3356-VM |
For amplify low noise and high frequency |
NEC |
| 3752 |
2SC3357-T1 |
For amplify high frequency and low noise. |
NEC |
| 3753 |
2SC3357-T2 |
For amplify high frequency and low noise. |
NEC |
| 3754 |
2SC3421 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3755 |
2SC3422 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING |
TOSHIBA |
| 3756 |
2SC3423 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3757 |
2SC3444 |
FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3758 |
2SC3495 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3759 |
2SC3526(H) |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3760 |
2SC3526H |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3761 |
2SC3576 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3762 |
2SC3624 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 3763 |
2SC3624A |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 3764 |
2SC3650 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3765 |
2SC3651 |
High Gain, Low Frequency, General Purpose NPN Amplifier Transistor |
ON Semiconductor |
| 3766 |
2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3767 |
2SC3652 |
SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER |
Hitachi Semiconductor |
| 3768 |
2SC3661 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3769 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3770 |
2SC3663-L |
For amplify high frequency and low noise. |
NEC |
| 3771 |
2SC3663-T1B |
For amplify high frequency and low noise. |
NEC |
| 3772 |
2SC3663-T2B |
For amplify high frequency and low noise. |
NEC |
| 3773 |
2SC367 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 3774 |
2SC368 |
Low Frequency Low-Noise, Low Level Transistor |
TOSHIBA |
| 3775 |
2SC3689 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3776 |
2SC369 |
Low Frequency Low-Noise Transistor |
TOSHIBA |
| 3777 |
2SC370 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 3778 |
2SC370 |
Low Frequency Small-Signal Transistor |
TOSHIBA |
| 3779 |
2SC370 |
High-Frequency Transistor SW BAND |
TOSHIBA |
| 3780 |
2SC370 |
High-Frequency Transistor BC BAND |
TOSHIBA |
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