| No. |
Part Name |
Description |
Manufacturer |
| 3751 |
BBY32CB |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 3752 |
BBY32DA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 3753 |
BBY32DA |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 3754 |
BBY32DB |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 3755 |
BBY32DB |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 3756 |
BBY32EA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 3757 |
BBY32EA |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 3758 |
BBY32FA |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 3759 |
BBY32FA |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 3760 |
BCR400 |
Application Considerations for the Integrated Bias Control Circuits |
Infineon |
| 3761 |
BD16805FV-M |
Built-in the Phase adjustment control and 180°energizing drive Three Phase Motor Predriver |
ROHM |
| 3762 |
BD16805FV-ME2 |
Built-in the Phase adjustment control and 180°energizing drive Three Phase Motor Predriver |
ROHM |
| 3763 |
BF |
Precision Rotative Transducers, Conductive Plastic, Bushing Mounting, Size 08 to 30, Good Repeatability, Long Life, Essentially Infinite Resolution, Up to 6 Electrical Functions on the Same Shaft |
Vishay |
| 3764 |
BF414 |
Epitaxial planar PNP transistor, intended for use as common base amplifier in the VHF range |
SGS-ATES |
| 3765 |
BF420A |
Silicon NPN Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 3766 |
BF421A |
Silicon PNP Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 3767 |
BF422A |
Silicon NPN Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 3768 |
BF423A |
Silicon PNP Epitaxial Planar Transistor, letter A specifies the fact that have EBC lead configuration |
IPRS Baneasa |
| 3769 |
BF506 |
Epitaxial planar PNP transistor, it is intended for use as mixer and oscillator in the VHF range |
SGS-ATES |
| 3770 |
BFQ65 |
NPN microwave NPN transistor, designed for use in the GHz range, very low noise |
Philips |
| 3771 |
BFQ74 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications) |
Siemens |
| 3772 |
BFS55 |
NPN transistor for RF applications up to the GHz range |
Siemens |
| 3773 |
BFW16A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 3774 |
BFW16A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 3775 |
BFW17 |
Silicon NPN epitaxial planar RF transistor of the multi-emitter design |
ICCE |
| 3776 |
BFW17A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 3777 |
BFW17A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 3778 |
BFW45 |
NPN silicon transistor intended for the output stage of the horizontal deflection amplifier |
ICCE |
| 3779 |
BFW45 |
NPN silicon transistor intended for the output stage of the horizontal deflection amplifier |
ICCE |
| 3780 |
BFW92 |
Silicon NPN planar epitaxial transistor for RF amplifiers up to the GHz range |
VALVO |
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