| No. |
Part Name |
Description |
Manufacturer |
| 3781 |
T224162-28J |
256K x 16 DRAM EDO page mode, 28ns |
TM Technology |
| 3782 |
T224162-28S |
256K x 16 DRAM EDO page mode, 28ns |
TM Technology |
| 3783 |
T224162-35J |
256K x 16 DRAM EDO page mode, 35ns |
TM Technology |
| 3784 |
T224162-35S |
256K x 16 DRAM EDO page mode, 35ns |
TM Technology |
| 3785 |
T224162-45J |
256K x 16 DRAM EDO page mode, 45ns |
TM Technology |
| 3786 |
T224162-45S |
256K x 16 DRAM EDO page mode, 45ns |
TM Technology |
| 3787 |
T224162-50J |
256K x 16 DRAM EDO page mode, 50ns |
TM Technology |
| 3788 |
T224162-50S |
256K x 16 DRAM EDO page mode, 50ns |
TM Technology |
| 3789 |
T4312816A-10S |
100MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
| 3790 |
T4312816A-6S |
166MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
| 3791 |
T4312816A-7.5S |
133MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
| 3792 |
T4312816A-7S |
143MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
| 3793 |
T4312816A-8S |
125MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
| 3794 |
T431616A-7C |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
| 3795 |
T431616A-7CI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
| 3796 |
T431616A-7S |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
| 3797 |
T431616A-7SI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
| 3798 |
TC511664B |
65536 word x 16 bit DRAM |
TOSHIBA |
| 3799 |
TC528128BJ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 3800 |
TC528128BJ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 3801 |
TC528128BZ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 3802 |
TC528128BZ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 3803 |
TC528267 |
262144 Words x 8 Bits Multiport DRAM |
TOSHIBA |
| 3804 |
TC59YM816BKG |
XDR™ DRAM |
TOSHIBA |
| 3805 |
TC59YM916BKG |
XDR™ DRAM |
TOSHIBA |
| 3806 |
THMY641661BEG |
16/777/216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE |
TOSHIBA |
| 3807 |
THMY641661BEG-10 |
16/777/216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE |
TOSHIBA |
| 3808 |
THMY641661BEG-80 |
16/777/216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE |
TOSHIBA |
| 3809 |
THMY644071BEG |
4/194/304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE |
TOSHIBA |
| 3810 |
THMY644071BEG-10 |
4,194,304-words by 64-BITS synchronous DRAM module |
TOSHIBA |
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