| No. |
Part Name |
Description |
Manufacturer |
| 3781 |
3N258 |
Glass Passivated Single-Phase Bridge Rectifier, Forward Current 2.0 A |
Vishay |
| 3782 |
3N259 |
Glass Passivated Single-Phase Bridge Rectifier, Forward Current 2.0 A |
Vishay |
| 3783 |
3NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 3784 |
3PHASEPWM |
3-Phase Synchronous PWM Controller IC Provides an Integrated Solution for Intel VRM 9.0 Design Guidelines |
International Rectifier |
| 3785 |
3SK134B |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 3786 |
3SK135A |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
NEC |
| 3787 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
| 3788 |
3SK176A |
RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 3789 |
3SK177 |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD |
NEC |
| 3790 |
3SK202 |
Field-effect Transistor - Silicon N Channel 4-pole MOS Type - For VHF band high-gain low-noise amplification |
Panasonic |
| 3791 |
3SK206 |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
NEC |
| 3792 |
3SK21H |
Silicon N-Channel MOS Type FET Transistor, intended for use in Chopper |
Hitachi Semiconductor |
| 3793 |
3SK222 |
RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 3794 |
3SK223 |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 3795 |
3SK224 |
RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 3796 |
3SK252 |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 3797 |
3SK253 |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 3798 |
3SK254 |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |
NEC |
| 3799 |
3SK255 |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |
NEC |
| 3800 |
3SK299 |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD |
NEC |
| 3801 |
3SK30 |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 3802 |
3SK30A |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 3803 |
3TH41 |
SILICON DIFFUSED TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY/ COLOR TV) |
TOSHIBA |
| 3804 |
3TH41A |
SILICON DIFFUSED TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY/ COLOR TV) |
TOSHIBA |
| 3805 |
3WK164 43 |
Transmitter with FC connector for GI fibre |
Tesla Elektronicke |
| 3806 |
3WK164 44 |
Transmitter with FC connector for GI fibre |
Tesla Elektronicke |
| 3807 |
3X38FTR |
OCTAL-FET (Fast Ethernet Transceiver) for 10Base-T/100Base-TX/FX |
Agere Systems |
| 3808 |
4-AAZ10 |
Germanium diode quartet for ring modulators |
TUNGSRAM |
| 3809 |
4-OA1154Q |
Germanium tip diode quartet for ring modulators |
TUNGSRAM |
| 3810 |
40 |
1620 nm DFB Laser for Supervisory Channel Applications |
Ericsson Microelectronics |
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