| No. |
Part Name |
Description |
Manufacturer |
| 3781 |
Q62702-P835 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
Siemens |
| 3782 |
Q62702-P860 |
GaAs Infrared Emitter |
Siemens |
| 3783 |
Q62702-P96 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
Siemens |
| 3784 |
Q62702-P98 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
Siemens |
| 3785 |
Q62702G-39 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) |
Siemens |
| 3786 |
Q62702G0076 |
GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation) |
Siemens |
| 3787 |
Q62702G0077 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) |
Siemens |
| 3788 |
Q62702G62 |
GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) |
Siemens |
| 3789 |
Q62702G63 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
Siemens |
| 3790 |
Q62702G74 |
GaAs MMIC (Dual mode power amplifier for CDMA /TDMA portable cellular phones) |
Siemens |
| 3791 |
Q62703-F106 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 3792 |
Q62703-F107 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 3793 |
Q62703-F108 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 3794 |
Q62703-F97 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
| 3795 |
Q62703-Q1031 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
Siemens |
| 3796 |
Q62703-Q148 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
Siemens |
| 3797 |
Q62703-Q1819 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
Siemens |
| 3798 |
Q62703-Q1820 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
Siemens |
| 3799 |
Q62703-Q198 |
GaAs Infrared Emitter |
Siemens |
| 3800 |
Q62703-Q199 |
GaAs Infrared Emitter |
Siemens |
| 3801 |
QEC112 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 3802 |
QEC113 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 3803 |
QEC113C6R0 |
GaAs Infrared Emitting Diode |
Fairchild Semiconductor |
| 3804 |
QEC121 |
AIGAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 3805 |
QEC122 |
AIGAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 3806 |
QEC122C4R0 |
AlGaAs Infrared Emitting Diode |
Fairchild Semiconductor |
| 3807 |
QEC122C6R0 |
AlGaAs Infrared Emitting Diode |
Fairchild Semiconductor |
| 3808 |
QED221 |
AIGAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 3809 |
QED222 |
AIGAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 3810 |
QED233 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
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