| No. |
Part Name |
Description |
Manufacturer |
| 3781 |
MFE4012 |
P-channel junction field-effect transistor, depletion mode (Type A) |
Motorola |
| 3782 |
MFE5000 |
Silicon P-Channel Enhancement MOS Field Effect Quad Transistor |
Motorola |
| 3783 |
MFR9180 |
RF Power Field Effect Transistors |
Motorola |
| 3784 |
MGSF3441VT1-D |
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors |
ON Semiconductor |
| 3785 |
MGSF3441XT1-D |
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors |
ON Semiconductor |
| 3786 |
MGSF3442VT3 |
Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor |
Motorola |
| 3787 |
MGSF3442XT1-D |
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors |
ON Semiconductor |
| 3788 |
MGSF3442XT3 |
Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor |
Motorola |
| 3789 |
MGSF3454VT1-D |
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors |
ON Semiconductor |
| 3790 |
MGSF3454VT3 |
Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor |
Motorola |
| 3791 |
MGSF3454XT1-D |
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors |
ON Semiconductor |
| 3792 |
MGSF3454XT3 |
Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor |
Motorola |
| 3793 |
MGSF3455VT1-D |
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors |
ON Semiconductor |
| 3794 |
MGSF3455VT3 |
Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor |
Motorola |
| 3795 |
MGSF3455XT1-D |
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors |
ON Semiconductor |
| 3796 |
MGSF3455XT3 |
Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor |
Motorola |
| 3797 |
MH1SD1 |
Contactless switch operated by a magnetic field |
Tesla Elektronicke |
| 3798 |
MH1SS1 |
Contactless switch operated by a magnetic field |
Tesla Elektronicke |
| 3799 |
MH3SD2 |
Contactless switch operated by a magnetic field |
Tesla Elektronicke |
| 3800 |
MH3SS2 |
Contactless switch operated by a magnetic field |
Tesla Elektronicke |
| 3801 |
MKP 1839 |
C-values 1000 pF - 10 µF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL |
Vishay |
| 3802 |
MKP 1840 |
C-values 4700 pF - 10 µF, Voltage 100 - 630 VDC, Low losses, Low dielectric absorption, PCM 5-37.5 |
Vishay |
| 3803 |
MKT-H04D |
4 LEAD.100 DIA P.C.SHIELDED METAL CAN PACKAGE (H) |
National Semiconductor |
| 3804 |
ML87V2104 |
Video Signal Noise Reduction and Field Rate Conversion IC with a Built-in 4M Bit Field Memory |
OKI electronic componets |
| 3805 |
ML87V2104 |
Video Signal Noise Reduction and Field Rate Conversion IC with a Built-in 4M Bit Field Memory |
OKI electronic componets |
| 3806 |
MMBF170 |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 3807 |
MMBF170 |
N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
| 3808 |
MMBF170W |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3809 |
MMBF170_NL |
N - Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 3810 |
MMBF2201NT3 |
Small-signal MOSFET TMOS single N-channel field effect transistor |
Motorola |
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