| No. |
Part Name |
Description |
Manufacturer |
| 3781 |
2N980 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 3782 |
2N982 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 3783 |
2N983 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 3784 |
2N984 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 3785 |
2N985 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 3786 |
2N995 |
PNP silicon transistor for high-frequency |
Motorola |
| 3787 |
2N995 |
Transistor, high speed saturated switches |
SGS-ATES |
| 3788 |
2S3M |
High speed switching 2A(4Arms) MOLD thyristor |
NEC |
| 3789 |
2SA0838 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 3790 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 3791 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 3792 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 3793 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 3794 |
2SA1011 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 3795 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 3796 |
2SA1016 |
High-Voltage Low-Noise Amp Applications |
SANYO |
| 3797 |
2SA1016K |
High-Voltage Low-Noise Amp Applications |
SANYO |
| 3798 |
2SA1020 |
One Watt High Current PNP Transistor |
ON Semiconductor |
| 3799 |
2SA1022 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 3800 |
2SA1041 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 3801 |
2SA1042 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 3802 |
2SA1043 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 3803 |
2SA1044 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 3804 |
2SA1072 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
| 3805 |
2SA1072A |
Silicon High Speed Power PNP Transistor |
Fujitsu Microelectronics |
| 3806 |
2SA1073 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
| 3807 |
2SA1075 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
| 3808 |
2SA1076 |
160V PNP silicon general purpose high speed power transistor |
Fujitsu Microelectronics |
| 3809 |
2SA1077 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
| 3810 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
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