| No. |
Part Name |
Description |
Manufacturer |
| 3781 |
1N5956C |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 3782 |
1N5956D |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 3783 |
1N6099 |
HIGH CONDUCTANCE LOW LEAKAGE DIODES |
BKC International Electronics |
| 3784 |
1N616 |
20 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3785 |
1N617 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3786 |
1N618 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3787 |
1N625 |
20 V, 500 mW general purpose diode |
BKC International Electronics |
| 3788 |
1N625 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 3789 |
1N626 |
35 V, 500 mW general purpose diode |
BKC International Electronics |
| 3790 |
1N6263 |
60 V, 400 mW silicon schottky barrier diode |
BKC International Electronics |
| 3791 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 3792 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 3793 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
ST Microelectronics |
| 3794 |
1N6264 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 3795 |
1N6265 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 3796 |
1N6266 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 3797 |
1N6267 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 1500W |
Shanghai Sunrise Electronics |
| 3798 |
1N627 |
75 V, 500 mW general purpose diode |
BKC International Electronics |
| 3799 |
1N628 |
125 V, 500 mW general purpose diode |
BKC International Electronics |
| 3800 |
1N629 |
175 V, 500 mW general purpose diode |
BKC International Electronics |
| 3801 |
1N631 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3802 |
1N632 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3803 |
1N633 |
120 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3804 |
1N634 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3805 |
1N635 |
165 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3806 |
1N636 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3807 |
1N645 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 3808 |
1N646 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 3809 |
1N647 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 3810 |
1N648 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| | | |
