| No. |
Part Name |
Description |
Manufacturer |
| 3781 |
2SD2254 |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 3782 |
2SD2255 |
Silicon NPN triple diffusion planar type Darlington For power amplification |
Panasonic |
| 3783 |
2SD2258 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3784 |
2SD2259 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3785 |
2SD2263 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 3786 |
2SD227 |
Medium Power Amplifiers and Switches |
Unknow |
| 3787 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 3788 |
2SD2273 |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 3789 |
2SD2321 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3790 |
2SD234 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB434 |
TOSHIBA |
| 3791 |
2SD2341 |
For power amplification |
Panasonic |
| 3792 |
2SD2345 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3793 |
2SD235 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB435 |
TOSHIBA |
| 3794 |
2SD235 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 3795 |
2SD2352 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3796 |
2SD2353 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3797 |
2SD2357 |
Silicon NPN epitaxial planer type(For low-frequency amplification) |
Panasonic |
| 3798 |
2SD2357 |
Silicon PNP epitaxial planer typeFor low-frequency amplification) |
Panasonic |
| 3799 |
2SD2358 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3800 |
2SD2359 |
Silicon PNP epitaxial planer type(For low-frequency amplification) |
Panasonic |
| 3801 |
2SD2359 |
Silicon NPN epitaxial planer type(For low-frequency amplification) |
Panasonic |
| 3802 |
2SD2374 |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 3803 |
2SD2374 |
Silicon NPN triple diffusion planar type(For power amplification) |
Panasonic |
| 3804 |
2SD2374A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3805 |
2SD2375 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3806 |
2SD2384 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 3807 |
2SD2385 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 3808 |
2SD2386 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 3809 |
2SD2387 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 3810 |
2SD2406 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
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