| No. |
Part Name |
Description |
Manufacturer |
| 3781 |
2N6975 |
5A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 3782 |
2N6976 |
5A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 3783 |
2N6977 |
5A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 3784 |
2N6978 |
5A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 3785 |
2N7000A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 3786 |
2N7002 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Panjit International Inc |
| 3787 |
2N7002A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 3788 |
2N7002K |
N-channel TrenchMOS intermediate level FET |
Nexperia |
| 3789 |
2N7002K |
N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
| 3790 |
2N7218 |
HEXFET TRANSISTOR |
International Rectifier |
| 3791 |
2N7288D |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
| 3792 |
2N7288H |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
| 3793 |
2N7288R |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
| 3794 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
| 3795 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 3796 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 3797 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 3798 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 3799 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 3800 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 3801 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 3802 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 3803 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 3804 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 3805 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 3806 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 3807 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 3808 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
| 3809 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 3810 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
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