| No. |
Part Name |
Description |
Manufacturer |
| 3781 |
2SB942A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3782 |
2SB944 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3783 |
2SB945 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3784 |
2SB946 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3785 |
2SB948 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3786 |
2SB948A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3787 |
2SB949 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3788 |
2SB949A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3789 |
2SB950 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3790 |
2SB950A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3791 |
2SB951 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3792 |
2SB951A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3793 |
2SB952 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3794 |
2SB952A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3795 |
2SB953 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3796 |
2SB953A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3797 |
2SB968 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 3798 |
2SC1424 |
NPN silicon general purpose transistor (This datasheet of the NE73412 is also the datasheet of 2SC1424, see the Electrical Characteristics table) |
NEC |
| 3799 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 3800 |
2SC1685 |
Low Level and General Purpose Amplifiera |
Micro Electronics |
| 3801 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 3802 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 3803 |
2SC2107 |
NPN Silicon Epitaxial Transistor, Industrial Use, General Purpose Amplifier and Switches |
NEC |
| 3804 |
2SC2412 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 3805 |
2SC2412KLT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 3806 |
2SC2412KQKT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 3807 |
2SC2412KQLT1 |
50 V, general purpose transistor |
Leshan Radio Company |
| 3808 |
2SC2412KRLT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 3809 |
2SC2412KSLT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 3810 |
2SC2412KT146 |
NPN General Purpose Amplification Transistor |
ROHM |
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