| No. |
Part Name |
Description |
Manufacturer |
| 3811 |
3KP9.0CA-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=3000Watts, VRWM=9V, Tolerance=5% |
Comchip Technology |
| 3812 |
3KP9.0CA-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=3000Watts, VRWM=9V, Tolerance=5% |
Comchip Technology |
| 3813 |
3KP90A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=3000Watts, VRWM=90V, Tolerance=5% |
Comchip Technology |
| 3814 |
3KP90A-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=3000Watts, VRWM=90V, Tolerance=5% |
Comchip Technology |
| 3815 |
3KP90CA-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=3000Watts, VRWM=90V, Tolerance=5% |
Comchip Technology |
| 3816 |
3KP90CA-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=3000Watts, VRWM=90V, Tolerance=5% |
Comchip Technology |
| 3817 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 3818 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3819 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 3820 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3821 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 3822 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3823 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 3824 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3825 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 3826 |
3N157 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| 3827 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3828 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 3829 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3830 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 3831 |
3N158 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| 3832 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3833 |
3N158A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 3834 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3835 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3836 |
3N161 |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
Intersil |
| 3837 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3838 |
3N163 |
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch |
Calogic |
| 3839 |
3N163 |
P-channel enchancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| 3840 |
3N163 |
P-Channel Enhancement Mode MOSFET |
Linear Systems |
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