| No. |
Part Name |
Description |
Manufacturer |
| 3811 |
VV6410C036 |
DUAL-MODE DIGITAL CAMERA CHIPSET |
ST Microelectronics |
| 3812 |
VV6411 |
DUAL-MODE DIGITAL CAMERA CHIPSET |
SGS Thomson Microelectronics |
| 3813 |
VV6411 |
DUAL-MODE DIGITAL CAMERA CO-PROCESSOR |
ST Microelectronics |
| 3814 |
VV6411C036 |
DUAL-MODE DIGITAL CAMERA CHIPSET |
SGS Thomson Microelectronics |
| 3815 |
VV6411C036 |
DUAL-MODE DIGITAL CAMERA CO-PROCESSOR |
ST Microelectronics |
| 3816 |
VV6500 |
DUAL-MODE DIGITAL CAMERA CHIPSET |
SGS Thomson Microelectronics |
| 3817 |
VV6500 |
DUAL-MODE DIGITAL CAMERA CHIPSET |
ST Microelectronics |
| 3818 |
VV6500C001 |
DUAL-MODE DIGITAL CAMERA CHIPSET |
SGS Thomson Microelectronics |
| 3819 |
VV6500C001 |
DUAL-MODE DIGITAL CAMERA CHIPSET |
ST Microelectronics |
| 3820 |
VV6501 |
DUAL-MODE DIGITAL CAMERA CO-PROCESSOR |
SGS Thomson Microelectronics |
| 3821 |
VV6501C001 |
DUAL-MODE DIGITAL CAMERA CO-PROCESSOR |
SGS Thomson Microelectronics |
| 3822 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3823 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3824 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3825 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3826 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3827 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3828 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3829 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3830 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3831 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3832 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3833 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3834 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3835 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3836 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3837 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3838 |
W83759 |
ADVANCED VL-IDE DISK CONTROLLER |
Winbond Electronics |
| 3839 |
W83759A |
ADVANCED VL-IDE DISK CONTROLLER |
Winbond Electronics |
| 3840 |
XSA5223CK |
Wide dynamic range AGC transimpedance amplifier (150MHz) |
Philips |
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