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Datasheets for EQUENC

Datasheets found :: 20335
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No. Part Name Description Manufacturer
3811 B761D Operational amplifier with Darlington output, external frequency compensation, possibly equivalent TAA761A RFT
3812 B765D Operational amplifier with Darlington output, external frequency compensation, extended temperature range, possibly equivalent TAA765A RFT
3813 B772 Audio Frequency Power Amplifier Fairchild Semiconductor
3814 B772 EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) Korea Electronics (KEC)
3815 B772 PNP (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) Samsung Electronic
3816 B861D Operational amplifier with Darlington output, external frequency compensation, possibly equivalent TAA861A RFT
3817 B865D Operational amplifier with Darlington output, external frequency compensation, extended temperature range, possibly equivalent TAA865A RFT
3818 BA1442A Audio LSIs > High frequency signal processing > Tuner system ROHM
3819 BA1450S Audio LSIs > High frequency signal processing > Tuner system ROHM
3820 BA1451F Audio LSIs > High frequency signal processing > Tuner system ROHM
3821 BA4424N Audio LSIs > High frequency signal processing > Front end ROHM
3822 BA4425F Audio LSIs > High frequency signal processing > Front end ROHM
3823 BA741 βA741 Internally frequency-compensated operational amplifier IPRS Baneasa
3824 BAR60 Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) Siemens
3825 BAR61 Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) Siemens
3826 BAR63 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
3827 BAR63-03 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
3828 BAR63-03W Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
3829 BAR63-04 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
3830 BAR63-04W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
3831 BAR63-05 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
3832 BAR63-05W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
3833 BAR63-06 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
3834 BAR63-06W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
3835 BAR63-W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
3836 BAR64-02 Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) Siemens
3837 BAR64-02W Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) Siemens
3838 BAR64-04W Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) Siemens
3839 BAR64-05W Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) Siemens
3840 BAR64-06W Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) Siemens


Datasheets found :: 20335
Page: | 124 | 125 | 126 | 127 | 128 | 129 | 130 | 131 | 132 |



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