No. |
Part Name |
Description |
Manufacturer |
3811 |
MD54-0003SMB |
1700-2000 MHz, MMIC medium level mixer |
MA-Com |
3812 |
MD54-0003SMB |
MMIC Medium Level Mixer 1700 - 2000 MHz |
Tyco Electronics |
3813 |
MD54-0003TR |
1700-2000 MHz, MMIC medium level mixer |
MA-Com |
3814 |
MD54-0003TR |
MMIC Medium Level Mixer 1700 - 2000 MHz |
Tyco Electronics |
3815 |
MD54-0004 |
800-1000 MHz, MMIC medium level mixer |
MA-Com |
3816 |
MD54-0004 |
MMIC Medium Level Mixer 800 - 1000 MHz |
Tyco Electronics |
3817 |
MD54-0004RTR |
800-1000 MHz, MMIC medium level mixer |
MA-Com |
3818 |
MD54-0004RTR |
MMIC Medium Level Mixer 800 - 1000 MHz |
Tyco Electronics |
3819 |
MD54-0004SMB |
800-1000 MHz, MMIC medium level mixer |
MA-Com |
3820 |
MD54-0004SMB |
MMIC Medium Level Mixer 800 - 1000 MHz |
Tyco Electronics |
3821 |
MD54-0004TR |
800-1000 MHz, MMIC medium level mixer |
MA-Com |
3822 |
MD54-0004TR |
MMIC Medium Level Mixer 800 - 1000 MHz |
Tyco Electronics |
3823 |
MD54-0005 |
800-1000 MHz, MMIC medium level mixer |
MA-Com |
3824 |
MD54-0005SMB |
800-1000 MHz, MMIC medium level mixer |
MA-Com |
3825 |
MD54-0005TR |
800-1000 MHz, MMIC medium level mixer |
MA-Com |
3826 |
MGA-545P8 |
MGA-545P8 · Low Current +22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems |
Agilent (Hewlett-Packard) |
3827 |
MGA-63100 |
Medium Power 2 Stage GaAs FET Cascade |
AVANTEK |
3828 |
MGA-65100 |
Medium Power 2 Stage GaAs FET Cascade |
AVANTEK |
3829 |
MGF1951A |
Medium Power Microwave MESFET |
Mitsubishi Electric Corporation |
3830 |
MGF1951A-01 |
Medium Power Microwave MESFET |
Mitsubishi Electric Corporation |
3831 |
MJ4030 |
60V darlington medium power complementary silicon transistor |
Comset Semiconductors |
3832 |
MJ4031 |
80V darlington medium power complementary silicon transistor |
Comset Semiconductors |
3833 |
MJ4032 |
100V darlington medium power complementary silicon transistor |
Comset Semiconductors |
3834 |
MJ4033 |
60V darlington medium power complementary silicon transistor |
Comset Semiconductors |
3835 |
MJ4034 |
80V darlington medium power complementary silicon transistor |
Comset Semiconductors |
3836 |
MJ4035 |
100V darlington medium power complementary silicon transistor |
Comset Semiconductors |
3837 |
MJE13002 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE. |
Continental Device India Limited |
3838 |
MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 1.500A Ic, 8 - 40 hFE. |
Continental Device India Limited |
3839 |
MJE13004 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 4.000A Ic, 10 - 60 hFE. |
Continental Device India Limited |
3840 |
MJE13005 |
2.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 10 - 60 hFE. |
Continental Device India Limited |
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