| No. |
Part Name |
Description |
Manufacturer |
| 3811 |
2N5401 |
PNP Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 3812 |
2N5401 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 3813 |
2N5401 |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 3814 |
2N5401 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3815 |
2N5401 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 3816 |
2N5401 |
PNP Transistor - General purpose AMPS and switches |
National Semiconductor |
| 3817 |
2N5401 |
PNP General Purpose Amplifier |
National Semiconductor |
| 3818 |
2N5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 3819 |
2N5401AI |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 3820 |
2N5401BU |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3821 |
2N5401CTA |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3822 |
2N5401NLBU |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3823 |
2N5401SAM |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 3824 |
2N5401TA |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3825 |
2N5401TAR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3826 |
2N5401TF |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3827 |
2N5401TFR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3828 |
2N5401_D81Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3829 |
2N5401_J05Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3830 |
2N5401_J61Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3831 |
2N5415 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 3832 |
2N5415 |
1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 3833 |
2N5415 |
High-voltage silicon P-N-P planar transistor. |
General Electric Solid State |
| 3834 |
2N5416 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 3835 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 3836 |
2N5416 |
High-voltage silicon P-N-P planar transistor. |
General Electric Solid State |
| 3837 |
2N5427 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 3838 |
2N5428 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 3839 |
2N5429 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 3840 |
2N5430 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
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