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Datasheets for OEL

Datasheets found :: 116520
Page: | 124 | 125 | 126 | 127 | 128 | 129 | 130 | 131 | 132 |
No. Part Name Description Manufacturer
3811 80610-50 High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz SGS Thomson Microelectronics
3812 81150M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
3813 81175M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
3814 81300M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
3815 81390M Transistor designed for IFF avionics applicatios SGS Thomson Microelectronics
3816 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
3817 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
3818 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
3819 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
3820 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
3821 81550M High power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
3822 81600M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
3823 8169 DIGITAL AUDIO PROCESSOR WITH MULTICHANNEL DDX�� ST Microelectronics
3824 81720-20 Transistor for communications applications SGS Thomson Microelectronics
3825 81922-18 Transistor for communications applications SGS Thomson Microelectronics
3826 82022-20 Common base NPN silicon power transistor for telemetry applications SGS Thomson Microelectronics
3827 82023-10 Transistor designed specifically for Telemetry and Communications applications SGS Thomson Microelectronics
3828 82023-16 Transistor designed specifically for Telemetry and Communications applications SGS Thomson Microelectronics
3829 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
3830 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
3831 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
3832 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
3833 82324-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
3834 82325-40 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
3835 82327-10 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
3836 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
3837 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
3838 82327-6 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
3839 82729-30 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
3840 82729-60 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics


Datasheets found :: 116520
Page: | 124 | 125 | 126 | 127 | 128 | 129 | 130 | 131 | 132 |



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