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Datasheets for SIGNE

Datasheets found :: 4328
Page: | 124 | 125 | 126 | 127 | 128 | 129 | 130 | 131 | 132 |
No. Part Name Description Manufacturer
3811 SD1495 870MHzz 24V 35W Class C transistor designed for base station applications in cellular telephone systems SGS Thomson Microelectronics
3812 SD1495-03 24V 30W Class C epitaxial silicon NPN transistor designed for amplifier applications in the 900-960MHz SGS Thomson Microelectronics
3813 SD1500 NPN Planar Pulsed Transistor designed for use in L BAND radar applications SGS Thomson Microelectronics
3814 SD1501 1.2-1.4GHz 30W 35V RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. SGS Thomson Microelectronics
3815 SD1504 1.2-1.4GHz 50W 45V RF NPN transistor, designed for high power pulse at L-Band SGS Thomson Microelectronics
3816 SD1505 1.2-1.4GHz 150W 50V RF transistor designed for high power pulse at L-BAND SGS Thomson Microelectronics
3817 SD1507 1.2-1.4GHz 285W 50V RF transistor designed for High Power pulse at L-BAND SGS Thomson Microelectronics
3818 SD1511-08 Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz SGS Thomson Microelectronics
3819 SD1512 NPN RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. SGS Thomson Microelectronics
3820 SD1513 NPN RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. SGS Thomson Microelectronics
3821 SD1514 NPN transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. SGS Thomson Microelectronics
3822 SD1520-3 NPN transistor designed for Class A operation at IFF, DME and TACAN frequencies SGS Thomson Microelectronics
3823 SD1520-8 NPN pulsed power transistor designed for Class A operation at IFF, DME and TACAN frequencies SGS Thomson Microelectronics
3824 SD1522-3 NPN power transistor, designed applications requiring peak power and low duty cycles such as IFF, DME, TACAN SGS Thomson Microelectronics
3825 SD1522-9 NPN power transistor, designed applications requiring peak power and low duty cycles such as IFF, DME, TACAN SGS Thomson Microelectronics
3826 SD1526-01 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
3827 SD1526-08 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
3828 SD1526-1 NPN power transistor, designed applications requiring peak power and low duty cycles such as IFF, DME, TACAN SGS Thomson Microelectronics
3829 SD1527-08 Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications SGS Thomson Microelectronics
3830 SD1527-8 NPN Power RF Transistor designed for IFF/DME applications SGS Thomson Microelectronics
3831 SD1528-6 NPN Power RF Transistor designed for IFF/DME TACAN applications SGS Thomson Microelectronics
3832 SD1528-8 Gold Metallized NPN Power RF Transistor designed for IFF/DME and TACAN applications SGS Thomson Microelectronics
3833 SD1530-1 NPN Power RF Transistor designed for IFF/DME and TACAN applications SGS Thomson Microelectronics
3834 SD1530-8 NPN Power RF Transistor designed for IFF/DME and TACAN applications SGS Thomson Microelectronics
3835 SD1536-03 NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications SGS Thomson Microelectronics
3836 SD1536-08 NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications SGS Thomson Microelectronics
3837 SD1536-3 NPN Power RF Transistor designed for IFF/DME and TACAN applications SGS Thomson Microelectronics
3838 SD1536-8 NPN Power RF Transistor designed for IFF/DME and TACAN applications SGS Thomson Microelectronics
3839 SD1540-3 NPN Power RF Transistor designed for IFF/DME and TACAN applications SGS Thomson Microelectronics
3840 SD1541 NPN Power RF Transistor designed for IFF/DME applications SGS Thomson Microelectronics


Datasheets found :: 4328
Page: | 124 | 125 | 126 | 127 | 128 | 129 | 130 | 131 | 132 |



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