| No. |
Part Name |
Description |
Manufacturer |
| 3841 |
STS4C3F60L |
N-CHANNEL 60V - 0.045 Ohm - P-CHANNEL 60V - 0.100 Ohm - StripFET" MOSFET |
ST Microelectronics |
| 3842 |
STT3PF20V |
P-CHANNEL 20V - 0.14 OHM - 2.2A SOT23-6L 2.7-DRIVE STRIPFET II POWER MOSFET |
ST Microelectronics |
| 3843 |
STT3PF30L |
P-CHANNEL 30V - 0.14 OHM - 3A SOT23-6L STRIPFET II POWER MOSFET |
ST Microelectronics |
| 3844 |
STU10P6F6 |
P-channel 60 V, 0.13 Ohm typ., 10 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in IPAK package |
ST Microelectronics |
| 3845 |
STU26NM50 |
N-CHANNEL 500V 0.10 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 3846 |
STU26NM50I |
N-CHANNEL 500V 0.10 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 3847 |
STU26NM60 |
N-CHANNEL 600V 0.125 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 3848 |
STU26NM60I |
N-CHANNEL 600V 0.125 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 3849 |
STUB082 |
Working peak reverse voltage: 70.1 V, 1 mA, 400 W surface mount transient voltage suppressor |
EIC discrete Semiconductors |
| 3850 |
STUB582 |
Working peak reverse voltage: 70.1 V, 1 mA, 400 W surface mount transient voltage suppressor |
EIC discrete Semiconductors |
| 3851 |
STW18N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-247 package |
ST Microelectronics |
| 3852 |
STW18NB40 |
N-CHANNEL 400V 0.19 OHM 18.4A TO-247/ISOWATT218 POWERMESH MOSFET |
SGS Thomson Microelectronics |
| 3853 |
STW18NB40 |
N-CHANNEL 400V - 0.19W - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 3854 |
STW18NB40 |
N-CHANNEL 400V 0.19 OHM 18.4A TO-247/ISOWATT218 POWERMESH MOSFET |
ST Microelectronics |
| 3855 |
STW20N65M5 |
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in TO-247 package |
ST Microelectronics |
| 3856 |
STW21N65M5 |
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-247 |
ST Microelectronics |
| 3857 |
STW21NM60ND |
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-247 package |
ST Microelectronics |
| 3858 |
STW23NM50N |
N-channel 500 V, 0.162 Ohm, 17 A, TO-247 MDmesh(TM) II Power MOSFET |
ST Microelectronics |
| 3859 |
STW23NM60ND |
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-247 |
ST Microelectronics |
| 3860 |
STW24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-247 package |
ST Microelectronics |
| 3861 |
STW24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-247 package |
ST Microelectronics |
| 3862 |
STW24NM60N |
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-247 |
ST Microelectronics |
| 3863 |
STW25N80K5 |
N-channel 800 V, 0.19 Ohm typ., 19.5 A SuperMESH(TM) 5 Power MOSFET in TO-247 package |
ST Microelectronics |
| 3864 |
STW25NM50N |
N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
ST Microelectronics |
| 3865 |
STW25NM60N |
N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
ST Microelectronics |
| 3866 |
STW25NM60ND |
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package |
ST Microelectronics |
| 3867 |
STW26NM50 |
N-CHANNEL 500V 0.10 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 3868 |
STW26NM50 |
N-CHANNEL 500V - 0.10 OHM - 26A TO-247 ZENER-PROTECTED MDMESH POWER MOSFET |
ST Microelectronics |
| 3869 |
STW26NM60 |
N-CHANNEL 600V 0.125 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 3870 |
STW26NM60 |
N-CHANNEL 600V - 0.125 OHM - 26A TO-247 ZENER-PROTECTED MDMESH POWER MOSFET |
ST Microelectronics |
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