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Datasheets for ACC

Datasheets found :: 11101
Page: | 125 | 126 | 127 | 128 | 129 | 130 | 131 | 132 | 133 |
No. Part Name Description Manufacturer
3841 K1S161611A 1Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3842 K1S161611A-I 1Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3843 K1S16161CA 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3844 K1S16161CA-I 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3845 K1S1616BCA 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3846 K1S321611C 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3847 K1S321611C-FI70 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3848 K1S321611C-I 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3849 K1S32161CC 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3850 K1S32161CC-FI70 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3851 K1S32161CC-I 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3852 K1S3216B1C 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3853 K1S3216B1C-I 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3854 K1S3216BCD 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3855 K1S64161CC 4Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3856 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
3857 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
3858 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
3859 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
3860 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
3861 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
3862 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
3863 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
3864 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
3865 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
3866 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
3867 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
3868 K4R271869B-MCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
3869 K4R271869B-MCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
3870 K4R271869B-MCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic


Datasheets found :: 11101
Page: | 125 | 126 | 127 | 128 | 129 | 130 | 131 | 132 | 133 |



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