| No. |
Part Name |
Description |
Manufacturer |
| 3841 |
UGF5J |
Discrete Devices -Diode-Ultra Fast Rectifier |
Taiwan Semiconductor |
| 3842 |
UGF8J |
Discrete Devices -Diode-Ultra Fast Rectifier |
Taiwan Semiconductor |
| 3843 |
UGF8JD |
Discrete Devices -Diode-Ultra Fast Rectifier |
Taiwan Semiconductor |
| 3844 |
UGS5J |
Discrete Devices -Diode-Ultra Fast Rectifier |
Taiwan Semiconductor |
| 3845 |
UMH11N |
Discrete Devices-Transistor-Complex Digital Transistor |
Taiwan Semiconductor |
| 3846 |
UR2KB100 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 3847 |
UR2KB60 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 3848 |
UR2KB80 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 3849 |
UR3KB100 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 3850 |
UR3KB60 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 3851 |
UR3KB80 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 3852 |
UR4KB100 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 3853 |
UR4KB60 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 3854 |
UR4KB80 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 3855 |
US1A |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 3856 |
US1B |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 3857 |
US1D |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 3858 |
US1G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 3859 |
US1J |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 3860 |
US1K |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 3861 |
US1M |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 3862 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3863 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3864 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3865 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3866 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3867 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3868 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3869 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 3870 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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