No. |
Part Name |
Description |
Manufacturer |
3841 |
IRF132 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 12A |
Siliconix |
3842 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
3843 |
IRF133 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 12A |
Siliconix |
3844 |
IRF140 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 27A |
Siliconix |
3845 |
IRF141 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 27A |
Siliconix |
3846 |
IRF142 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 24A |
Siliconix |
3847 |
IRF143 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 24A |
Siliconix |
3848 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
3849 |
IRF150 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 40A |
Siliconix |
3850 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
3851 |
IRF151 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 40A |
Siliconix |
3852 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
3853 |
IRF152 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 33A |
Siliconix |
3854 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
3855 |
IRF153 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 33A |
Siliconix |
3856 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
3857 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
3858 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
3859 |
IRF223 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
3860 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
3861 |
IRF230 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET |
SemeLAB |
3862 |
IRF230 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
3863 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
3864 |
IRF231 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A |
Siliconix |
3865 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
3866 |
IRF232 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A |
Siliconix |
3867 |
IRF233 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
3868 |
IRF233 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 8A |
Siliconix |
3869 |
IRF240 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A |
Siliconix |
3870 |
IRF241 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
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