| No. |
Part Name |
Description |
Manufacturer |
| 3841 |
BSY55 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
| 3842 |
BSY56 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 3843 |
BSY56 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
| 3844 |
BSY93 |
Silicon NPN epitaxial planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 3845 |
BU125S |
Silicon epitaxial planar NPN high voltage transistor |
SGS-ATES |
| 3846 |
BU406 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 3847 |
BU406 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 3848 |
BU406 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 3849 |
BU406 |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 3850 |
BU406D |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 3851 |
BU406H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 3852 |
BU406H |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 3853 |
BU406H |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 3854 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 3855 |
BU406TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 3856 |
BU407 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 3857 |
BU407 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 3858 |
BU407 |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 3859 |
BU407 |
SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 3860 |
BU407H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 3861 |
BU407H |
330 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 3862 |
BU407H |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 3863 |
BU407HTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 3864 |
BU407TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 3865 |
BU408 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 3866 |
BU408 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 3867 |
BU408 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 3868 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 3869 |
BU409 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
| 3870 |
BU606 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| | | |
