| No. |
Part Name |
Description |
Manufacturer |
| 3871 |
BD677 |
NPN Silicon Epibase power Darlington Transistor (40 Watt) |
Siemens |
| 3872 |
BD678 |
PNP Silicon Epibase power Darlington Transistor (40 Watt) |
Siemens |
| 3873 |
BD679 |
NPN Silicon Epibase power Darlington Transistor (40 Watt) |
Siemens |
| 3874 |
BD680 |
PNP Silicon Epibase power Darlington Transistor (40 Watt) |
Siemens |
| 3875 |
BD895 |
8 A N-P-N darlington power transistor. 45 V. 70 W. |
General Electric Solid State |
| 3876 |
BD895 |
45 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
| 3877 |
BD895A |
8 A N-P-N darlington power transistor. 45 V. 70 W. |
General Electric Solid State |
| 3878 |
BD895A |
45 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
| 3879 |
BD896 |
45 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
| 3880 |
BD896A |
45 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
| 3881 |
BD897 |
8 A N-P-N darlington power transistor. 60 V. 70 W. |
General Electric Solid State |
| 3882 |
BD897 |
60 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
| 3883 |
BD897A |
8 A N-P-N darlington power transistor. 60 V. 70 W. |
General Electric Solid State |
| 3884 |
BD897A |
60 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
| 3885 |
BD898 |
60 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
| 3886 |
BD898A |
60 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
| 3887 |
BD899 |
8 A N-P-N darlington power transistor. 80 V. 70 W. |
General Electric Solid State |
| 3888 |
BD899 |
80 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
| 3889 |
BD899A |
8 A N-P-N darlington power transistor. 80 V. 70 W. |
General Electric Solid State |
| 3890 |
BD899A |
80 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
| 3891 |
BD900 |
80 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
| 3892 |
BD900A |
80 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
| 3893 |
BD901 |
8 A N-P-N darlington power transistor. 100 V. 70 W. |
General Electric Solid State |
| 3894 |
BD901 |
100 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
| 3895 |
BD902 |
100 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
| 3896 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 3897 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 3898 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 3899 |
BGA427 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 3900 |
BK1001-7R |
150 Watt DC-DC Converters |
Power-One |
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