| No. |
Part Name |
Description |
Manufacturer |
| 3871 |
BSS84AKT |
50 V, 150 mA P-channel Trench MOSFET |
NXP Semiconductors |
| 3872 |
BSS84AKV |
50 V, 170 mA dual P-channel Trench MOSFET |
Nexperia |
| 3873 |
BSS84AKV |
50 V, 170 mA dual P-channel Trench MOSFET |
NXP Semiconductors |
| 3874 |
BSS84AKW |
50 V, 150 mA P-channel Trench MOSFET |
Nexperia |
| 3875 |
BSS84AKW |
50 V, 150 mA P-channel Trench MOSFET |
Nexperia |
| 3876 |
BSS84AKW |
50 V, 150 mA P-channel Trench MOSFET |
NXP Semiconductors |
| 3877 |
BSS84AKW |
50 V, 150 mA P-channel Trench MOSFET |
NXP Semiconductors |
| 3878 |
BSS84L |
Power MOSFET 130 mAmps, 50 Volts |
ON Semiconductor |
| 3879 |
BSS84LT1 |
Power MOSFET 130 mAmps, 50 Volts |
ON Semiconductor |
| 3880 |
BSS84LT1-D |
Power MOSFET 130 mAmps, 50 Volts P-Channel SOT-23 |
ON Semiconductor |
| 3881 |
BSS84LT1G |
Power MOSFET 130 mAmps, 50 Volts |
ON Semiconductor |
| 3882 |
BSV52LT1-D |
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23 |
ON Semiconductor |
| 3883 |
BT1074BI |
Single chip 850-950 MHz RF transeiver |
BTI BethelTronix |
| 3884 |
BTA08-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA IGT, 8.0 A IT(RMS) |
ON Semiconductor |
| 3885 |
BTA08-800CW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA IGT, 8.0 A IT(RMS) |
ON Semiconductor |
| 3886 |
BTA12-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA IGT, 12 A IT(RMS) |
ON Semiconductor |
| 3887 |
BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA IGT, 16 A IT(RMS) |
ON Semiconductor |
| 3888 |
BTA25-800B |
Triac, 25A, sensitivity 50 mA, 800V |
SGS Thomson Microelectronics |
| 3889 |
BTA26-600B |
Triac, 25A, sensitivity 50 mA, 600V |
SGS Thomson Microelectronics |
| 3890 |
BTA26-600BW |
Triac, 25A, sensitivity 50 mA, 600V |
SGS Thomson Microelectronics |
| 3891 |
BTA26-800B |
Triac, 25A, sensitivity 50 mA, 800V |
SGS Thomson Microelectronics |
| 3892 |
BTA26-800BW |
Triac, 25A, sensitivity 50 mA, 800V |
SGS Thomson Microelectronics |
| 3893 |
BTB24-600BW |
Triac, 25A, sensitivity 50 mA, 600V |
SGS Thomson Microelectronics |
| 3894 |
BTB24-800BW |
Triac, 25A, sensitivity 50 mA, 800V |
SGS Thomson Microelectronics |
| 3895 |
BTS 7750 G |
115mOhm TrilithIC |
Infineon |
| 3896 |
BTS 7750 GP |
115mOhm TrilithIC P-Pak |
Infineon |
| 3897 |
BTW69-1200N |
50 A - 1200 V non-insulated SCR thyristor |
ST Microelectronics |
| 3898 |
BU323 |
10 A N-P-N monollithic darlington power transistor. 350 V. 175 W. Gain of 150 at 6 A. |
General Electric Solid State |
| 3899 |
BU323 |
10 A N-P-N monollithic darlington power transistor. 350 V. 175 W. Gain of 150 at 6 A. |
General Electric Solid State |
| 3900 |
BU323A |
10 A N-P-N monollithic darlington power transistor. 400 V. 175 W. Gain of 150 at 6 A. |
General Electric Solid State |
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