| No. |
Part Name |
Description |
Manufacturer |
| 3871 |
PEF82913-HV1.3 |
Q-SMINTI (2B1Q Second Gen. Modular IS... |
Infineon |
| 3872 |
PJ494CD |
41V; 250mA; switchmode pulse width modulation control circuit |
PROMAX-JOHNTON |
| 3873 |
PJ494CS |
41V; 250mA; switchmode pulse width modulation control circuit |
PROMAX-JOHNTON |
| 3874 |
PMB2200 |
Integrated modulator-mixer for transmit path. |
Siemens |
| 3875 |
PMB2201 |
Mixer DC - 2.5 GHz and Vector Modulat... |
Infineon |
| 3876 |
PMB2201-R |
Mixer DC - 2.5 GHz and Vector Modulat... |
Infineon |
| 3877 |
PMB2205-S |
Quadrature Phase Modulator |
Infineon |
| 3878 |
PMB2208 |
Mixer and IF Vector Modulator |
Infineon |
| 3879 |
PMB2208-R |
Mixer and IF Vector Modulator |
Infineon |
| 3880 |
PS-117D |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kodenshi Corp |
| 3881 |
PS-117D |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kondenshi Corp |
| 3882 |
PS-117L |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kodenshi Corp |
| 3883 |
PS-117L |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kondenshi Corp |
| 3884 |
PS-R11D |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kodenshi Corp |
| 3885 |
PS-R11D |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kondenshi Corp |
| 3886 |
PS-R11L |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kodenshi Corp |
| 3887 |
PS-R11L |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kondenshi Corp |
| 3888 |
PS-R50D |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kodenshi Corp |
| 3889 |
PS-R50D |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kondenshi Corp |
| 3890 |
PS-R50L |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kodenshi Corp |
| 3891 |
PS-R50L |
Paper sensors(photo switches are composed of a modulated infrared emitting) |
Kondenshi Corp |
| 3892 |
Q62702-A0043 |
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
| 3893 |
Q62702-A1006 |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
| 3894 |
Q62702-A1017 |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
Siemens |
| 3895 |
Q62702-F1124 |
NPN Silicon RF Transistor (For IF amplifiers in TV-sat tuners and for VCR modulators) |
Siemens |
| 3896 |
Q62702-F1225 |
NPN Silicon RF Transistor (For modulators and amplifiers in TV and VCR tuners) |
Siemens |
| 3897 |
Q62702-F1519 |
NPN Silicon RF Transistor (For modulators and amplifiers in TV and VCR tuners) |
Siemens |
| 3898 |
Q62702-P1196 |
IR-EMPFANGER/DEMODULATOR-BAUSTEIN, IR-RECEIVER/DEMODULATOR DEVICE |
Siemens |
| 3899 |
Q62702-P1196 |
IR-EMPFANGER/DEMODULATOR-BAUSTEIN, IR-RECEIVER/DEMODULATOR DEVICE |
Siemens |
| 3900 |
Q62702-P1197 |
IR-EMPFANGER/DEMODULATOR-BAUSTEIN, IR-RECEIVER/DEMODULATOR DEVICE |
Siemens |
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