| No. |
Part Name |
Description |
Manufacturer |
| 3871 |
B180_B |
80V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
Diodes |
| 3872 |
B190_B |
90V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
Diodes |
| 3873 |
B20V1160 |
Silicon microwave power transistor |
BOPOLARICS |
| 3874 |
B20V1160B |
Silicon microwave power transistor |
BOPOLARICS |
| 3875 |
B20V1320B |
Silicon microwave power transistor |
BOPOLARICS |
| 3876 |
B20V140 |
Medium power silicon microwave transistor |
BOPOLARICS |
| 3877 |
B20V140B |
Medium power silicon microwave transistor |
BOPOLARICS |
| 3878 |
B20V1480B |
Silicon microwave power transistor |
BOPOLARICS |
| 3879 |
B30V1160 |
Silicon microwave power transistor |
BOPOLARICS |
| 3880 |
B30V1160B |
Silicon microwave power transistor |
BOPOLARICS |
| 3881 |
B30V1320 |
Silicon microwave power transistor |
BOPOLARICS |
| 3882 |
B30V1320B |
Silicon microwave power transistor |
BOPOLARICS |
| 3883 |
B30V140 |
Silicon microwave power transistor |
BOPOLARICS |
| 3884 |
B30V140B |
Silicon microwave power transistor |
BOPOLARICS |
| 3885 |
B30V1480B |
Silicon microwave power transistor |
BOPOLARICS |
| 3886 |
B30V180B |
Silicon microwave power transistor |
BOPOLARICS |
| 3887 |
B3800 |
Switching Regulator Controller Step Up Low Voltage (BIPOLAR) |
BayLinear |
| 3888 |
B3800M |
Switching Regulator Controller Step Up Low Voltage (BIPOLAR) |
BayLinear |
| 3889 |
B3800P |
Switching Regulator Controller Step Up Low Voltage (BIPOLAR) |
BayLinear |
| 3890 |
BC107 |
GENERAL PURPOSE SMALL SIGNAL NPN BIPOLAR TRANSISTOR |
SemeLAB |
| 3891 |
BC108 |
GENERAL PURPOSE SMALL SIGNAL NPN BIPOLAR TRANSISTOR |
SemeLAB |
| 3892 |
BC109 |
GENERAL PURPOSE SMALL SIGNAL NPN BIPOLAR TRANSISTOR |
SemeLAB |
| 3893 |
BC212 |
ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW |
Fairchild Semiconductor |
| 3894 |
BC337-16 |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 3895 |
BC337-25 |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 3896 |
BC337-40 |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 3897 |
BC338-16 |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 3898 |
BC338-25 |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 3899 |
BC338-40 |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 3900 |
BC378 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
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