| No. |
Part Name |
Description |
Manufacturer |
| 3871 |
2N3838 |
NPN-PNP complementary pair silicon transistor |
Motorola |
| 3872 |
2N3878 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
| 3873 |
2N3879 |
High speed, epitaxial collector silicon N-P-N planar transistor. |
General Electric Solid State |
| 3874 |
2N4012 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 3875 |
2N4020 |
Transistor silicon differential amplifiers |
SGS-ATES |
| 3876 |
2N4021 |
Transistor silicon differential amplifiers |
SGS-ATES |
| 3877 |
2N4022 |
Transistor silicon differential amplifiers |
SGS-ATES |
| 3878 |
2N4023 |
Transistor silicon differential amplifiers |
SGS-ATES |
| 3879 |
2N4024 |
Transistor silicon differential amplifiers |
SGS-ATES |
| 3880 |
2N4025 |
Transistor silicon differential amplifiers |
SGS-ATES |
| 3881 |
2N4036 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
| 3882 |
2N4037 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
| 3883 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 3884 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 3885 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 3886 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 3887 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 3888 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 3889 |
2N4314 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
| 3890 |
2N4891 |
P-N Planar silicon unijunction transistor |
Texas Instruments |
| 3891 |
2N4892 |
P-N Planar silicon unijunction transistor |
Texas Instruments |
| 3892 |
2N4893 |
P-N Planar silicon unijunction transistor |
Texas Instruments |
| 3893 |
2N4894 |
P-N Planar silicon unijunction transistor |
Texas Instruments |
| 3894 |
2N5016 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 3895 |
2N5090 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 3896 |
2N5102 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 3897 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
| 3898 |
2N5302 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 3899 |
2N5490 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
| 3900 |
2N5492 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
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