| No. |
Part Name |
Description |
Manufacturer |
| 3901 |
1N5954B |
160 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3902 |
1N5954C |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 3903 |
1N5954D |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 3904 |
1N5955 |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 3905 |
1N5955A |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 3906 |
1N5955B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 3907 |
1N5955B |
180 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3908 |
1N5955C |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 3909 |
1N5955D |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 3910 |
1N5956 |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 3911 |
1N5956A |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 3912 |
1N5956B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 3913 |
1N5956B |
200 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3914 |
1N5956C |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 3915 |
1N5956D |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 3916 |
1N6099 |
HIGH CONDUCTANCE LOW LEAKAGE DIODES |
BKC International Electronics |
| 3917 |
1N616 |
20 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3918 |
1N617 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3919 |
1N618 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3920 |
1N625 |
20 V, 500 mW general purpose diode |
BKC International Electronics |
| 3921 |
1N625 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 3922 |
1N626 |
35 V, 500 mW general purpose diode |
BKC International Electronics |
| 3923 |
1N6263 |
60 V, 400 mW silicon schottky barrier diode |
BKC International Electronics |
| 3924 |
1N6267 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 1500W |
Shanghai Sunrise Electronics |
| 3925 |
1N627 |
75 V, 500 mW general purpose diode |
BKC International Electronics |
| 3926 |
1N628 |
125 V, 500 mW general purpose diode |
BKC International Electronics |
| 3927 |
1N629 |
175 V, 500 mW general purpose diode |
BKC International Electronics |
| 3928 |
1N631 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3929 |
1N632 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3930 |
1N633 |
120 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
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