| No. |
Part Name |
Description |
Manufacturer |
| 3901 |
STFI6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 3902 |
STFW38N65M5 |
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-3PF package |
ST Microelectronics |
| 3903 |
STFW69N65M5 |
N-channel 650 V, 0.037 Ohm, 58 A MDmesh(TM) V Power MOSFET in TO-3PF package |
ST Microelectronics |
| 3904 |
STGFW20H65FB |
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed |
ST Microelectronics |
| 3905 |
STGFW30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed |
ST Microelectronics |
| 3906 |
STGFW40H65FB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed |
ST Microelectronics |
| 3907 |
STGW20H65FB |
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed |
ST Microelectronics |
| 3908 |
STGW30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed |
ST Microelectronics |
| 3909 |
STGW40H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed |
ST Microelectronics |
| 3910 |
STGW40H65FB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed |
ST Microelectronics |
| 3911 |
STGW50HF65SD |
60 A, 650 V, very low drop IGBT with soft and fast recovery diode |
ST Microelectronics |
| 3912 |
STGW60H65DF |
60 A, 650 V field stop trench gate IGBT with very fast diode |
ST Microelectronics |
| 3913 |
STGW60H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed |
ST Microelectronics |
| 3914 |
STGW60H65DRF |
60 A, 650 V field stop trench gate IGBT with Ultrafast diode |
ST Microelectronics |
| 3915 |
STGW60H65F |
60 A, 650 V field stop trench gate IGBT |
ST Microelectronics |
| 3916 |
STGW60H65FB |
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed |
ST Microelectronics |
| 3917 |
STGW80H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed |
ST Microelectronics |
| 3918 |
STGW80H65FB |
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed |
ST Microelectronics |
| 3919 |
STGWA80H65FB |
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed |
ST Microelectronics |
| 3920 |
STGWT20H65FB |
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed |
ST Microelectronics |
| 3921 |
STGWT30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed |
ST Microelectronics |
| 3922 |
STGWT40H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed |
ST Microelectronics |
| 3923 |
STGWT40H65FB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed |
ST Microelectronics |
| 3924 |
STGWT50HF65SD |
60 A, 650 V, very low drop IGBT with soft and fast recovery diode |
ST Microelectronics |
| 3925 |
STGWT60H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed |
ST Microelectronics |
| 3926 |
STGWT60H65FB |
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed |
ST Microelectronics |
| 3927 |
STGWT80H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed |
ST Microelectronics |
| 3928 |
STGWT80H65FB |
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed |
ST Microelectronics |
| 3929 |
STGY80H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed |
ST Microelectronics |
| 3930 |
STI12N65M5 |
N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh(TM) V Power MOSFET I2PAK |
ST Microelectronics |
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