| No. |
Part Name |
Description |
Manufacturer |
| 391 |
1N5382B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 392 |
1N5383B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 393 |
1N5384B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 394 |
1N5385B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 395 |
1N5386 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 396 |
1N5386B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 397 |
1N5387B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 398 |
1N5388B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 399 |
1N5531 |
Diode Zener Single 11V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 400 |
1N5531A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 401 |
1N5531A |
Diode Zener Single 11V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 402 |
1N5531B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 403 |
1N5531B |
Diode Zener Single 11V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 404 |
1N5531C |
Diode Zener Single 11V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 405 |
1N5531D |
Diode Zener Single 11V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 406 |
1N5636A |
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 407 |
1N5660A |
Diode TVS Single Uni-Dir 111V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 408 |
1N5737 |
Diode Zener Single 11V 20% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 409 |
1N5737A |
Diode Zener Single 11V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 410 |
1N5737B |
Diode Zener Single 11V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 411 |
1N5737C |
Diode Zener Single 11V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 412 |
1N5737D |
Diode Zener Single 11V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 413 |
1N5913 |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 414 |
1N5913A |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 415 |
1N5913C |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 416 |
1N5913D |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 417 |
1N5926 |
1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 418 |
1N5926 |
Diode Zener Single 11V 20% 1.5W 2-Pin DO-41 |
New Jersey Semiconductor |
| 419 |
1N5926A |
1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 420 |
1N5926A |
Diode Zener Single 11V 10% 1.5W 2-Pin DO-41 |
New Jersey Semiconductor |
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