No. |
Part Name |
Description |
Manufacturer |
391 |
5962R9475402VYX |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional. |
Aeroflex Circuit Technology |
392 |
5962R9475405QLA |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
Aeroflex Circuit Technology |
393 |
5962R9475405QLC |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
Aeroflex Circuit Technology |
394 |
5962R9475405QLX |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
Aeroflex Circuit Technology |
395 |
5962R9475405QXA |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
Aeroflex Circuit Technology |
396 |
5962R9475405QXC |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
Aeroflex Circuit Technology |
397 |
5962R9475405QXX |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
Aeroflex Circuit Technology |
398 |
5962R9475405QYA |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. |
Aeroflex Circuit Technology |
399 |
5962R9475405QYC |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. |
Aeroflex Circuit Technology |
400 |
5962R9475405QYX |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. |
Aeroflex Circuit Technology |
401 |
5962R9475405VLA |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
Aeroflex Circuit Technology |
402 |
5962R9475405VLC |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
Aeroflex Circuit Technology |
403 |
5962R9475405VLX |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
Aeroflex Circuit Technology |
404 |
5962R9475405VXA |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
Aeroflex Circuit Technology |
405 |
5962R9475405VXC |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
Aeroflex Circuit Technology |
406 |
5962R9475405VXX |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
Aeroflex Circuit Technology |
407 |
5962R9475405VYA |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder. |
Aeroflex Circuit Technology |
408 |
5962R9475405VYC |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold. |
Aeroflex Circuit Technology |
409 |
5962R9475405VYX |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional. |
Aeroflex Circuit Technology |
410 |
ACT-PS512K8Y-025L2T |
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 25ns. |
Aeroflex Circuit Technology |
411 |
AS4C256K16F0-25JC |
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time |
Alliance Semiconductor |
412 |
AS4C256K16F0-25JI |
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time |
Alliance Semiconductor |
413 |
AS4C256K16F0-25TC |
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time |
Alliance Semiconductor |
414 |
AS4C256K16F0-25TI |
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time |
Alliance Semiconductor |
415 |
AT22V10-25DM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
416 |
AT22V10-25GM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
417 |
AT22V10-25LM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
418 |
AT22V10-25NM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
419 |
BYQ28FX-150 |
Rectifier diodes, ultrafast, rugged, 150V, 10A, 25ns |
Philips |
420 |
BYQ28FX-200 |
Rectifier diodes, ultrafast, rugged, 200V, 10A, 25ns |
Philips |
| | | |