| No. |
Part Name |
Description |
Manufacturer |
| 391 |
2N3048 |
Silicon transistor NPN differential amplifiers |
Sprague |
| 392 |
2N3049 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 393 |
2N3049 |
PNP differential amplifiers - silicon transistor |
Sprague |
| 394 |
2N3050 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 395 |
2N3050 |
PNP differential amplifiers - silicon transistor |
Sprague |
| 396 |
2N3051 |
PNP differential amplifiers - silicon transistor |
Sprague |
| 397 |
2N3052 |
Silicon transistor NPN differential amplifiers |
Sprague |
| 398 |
2N3053 |
NPN small signal general purpose amplifier. |
Fairchild Semiconductor |
| 399 |
2N3053 |
NPN Silicon Switching and amplifier Transistor |
ITT Semiconductors |
| 400 |
2N3053 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 401 |
2N3054 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 402 |
2N3054 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 403 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 404 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 405 |
2N3055 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 406 |
2N3055 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 407 |
2N3055 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 408 |
2N3055 |
Silicon HOMETAXIAL NPN transistor, AF output amplifier |
SGS-ATES |
| 409 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 410 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 411 |
2N3055S |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX18 |
SESCOSEM |
| 412 |
2N3055U |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 413 |
2N3055V |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 414 |
2N3058 |
SEPT® silicon PNP transistor ultra low level amplifiers |
Sprague |
| 415 |
2N3059 |
SEPT® silicon PNP transistor ultra low level amplifiers |
Sprague |
| 416 |
2N3060 |
SEPT® silicon PNP transistor general purpose amplifiers |
Sprague |
| 417 |
2N3061 |
SEPT® silicon PNP transistor general purpose amplifiers |
Sprague |
| 418 |
2N3062 |
SEPT® silicon PNP transistor general purpose amplifiers |
Sprague |
| 419 |
2N3063 |
SEPT® silicon PNP transistor general purpose amplifiers |
Sprague |
| 420 |
2N3064 |
SEPT® silicon PNP transistor general purpose amplifiers |
Sprague |
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