No. |
Part Name |
Description |
Manufacturer |
391 |
GM71V17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
392 |
GM71V17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
393 |
GM71V17403CT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns |
Hynix Semiconductor |
394 |
GM71V17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
395 |
GM71V17403CT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns |
Hynix Semiconductor |
396 |
GM71VS17403CJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns |
Hynix Semiconductor |
397 |
GM71VS17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
398 |
GM71VS17403CJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns |
Hynix Semiconductor |
399 |
GM71VS17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
400 |
GM71VS17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
401 |
GM71VS17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
402 |
GM71VS17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
403 |
GM71VS17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
404 |
GM71VS17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
405 |
GM71VS17403CT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns |
Hynix Semiconductor |
406 |
GM71VS17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
407 |
GM71VS17403CT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns |
Hynix Semiconductor |
408 |
HB56SW3272ESK |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) |
Hitachi Semiconductor |
409 |
HB56SW3272ESK-5 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) |
Hitachi Semiconductor |
410 |
HB56SW3272ESK-6 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) |
Hitachi Semiconductor |
411 |
HC2509C |
Phase-Locked Loop Clock Distribution for Synchronous DRAM Applications |
Hynix Semiconductor |
412 |
HC2510 |
Phase-Locked Loop Clock Distribution for Synchronous DRAM Applications |
Hynix Semiconductor |
413 |
HC2510C |
Phase-Locked Loop Clock Distribution for Synchronous DRAM Applications |
Hynix Semiconductor |
414 |
HM5112805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
415 |
HM5112805FLTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
416 |
HM5112805FTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
417 |
HM5113805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
418 |
HM5113805FLTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
419 |
HM5113805FTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
420 |
HM5116100 |
16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
Hitachi Semiconductor |
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