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Datasheets for OF

Datasheets found :: 16485
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No. Part Name Description Manufacturer
391 2N3262 Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers RCA Solid State
392 2N4234 PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices Motorola
393 2N4235 PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices Motorola
394 2N4236 PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices Motorola
395 2N4932 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
396 2N4933 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
397 2N5441 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. Motorola
398 2N5442 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. Motorola
399 2N5443 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. Motorola
400 2N5444 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. Motorola
401 2N5445 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. Motorola
402 2N5446 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. Motorola
403 2N5470 The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note RCA Solid State
404 2N5884 hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 SGS Thomson Microelectronics
405 2N5916 High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE RCA Solid State
406 2N5917 High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE RCA Solid State
407 2N6072 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
408 2N6072A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
409 2N6072B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
410 2N6073 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. Motorola
411 2N6074 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
412 2N6074A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
413 2N6074B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
414 2N6075 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. Motorola
415 2N6104 Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note RCA Solid State
416 2N6105 Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note RCA Solid State
417 2N6383 10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
418 2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
419 2N6385 10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
420 2N6386 10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State


Datasheets found :: 16485
Page: | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |



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