No. |
Part Name |
Description |
Manufacturer |
391 |
2N3055 |
115.000W Power NPN Metal Can Transistor. 60V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
392 |
2N3055 |
NPN power transistor, 100V, 15A |
SemeLAB |
393 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
394 |
2N3056 |
NPN power transistor, 100V, 15A |
SemeLAB |
395 |
2N3713 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
396 |
2N3714 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
397 |
2N3715 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
398 |
2N3716 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
399 |
2N3771 |
50 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
400 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
401 |
2N3772 |
100 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
402 |
2N3773 |
High voltage, high power transistor. 160V, 150W. |
General Electric Solid State |
403 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
404 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
405 |
2N3791 |
-60 V, -10 A, 150 W, PNP silicon power transistor |
Texas Instruments |
406 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
407 |
2N4237 |
1.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 1.000A Ic, 15 hFE. |
Continental Device India Limited |
408 |
2N4239 |
1.000W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 15 hFE. |
Continental Device India Limited |
409 |
2N5086 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE |
Continental Device India Limited |
410 |
2N6027 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
411 |
2N6028 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
412 |
2N6254 |
High-power silicon N-P-N transistor. 100V, 150W. |
General Electric Solid State |
413 |
2N6262 |
High voltage silicon N-P-N transistor. 170V, 150W. |
General Electric Solid State |
414 |
2N6486 |
75.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
415 |
2N6487 |
75.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
416 |
2N6488 |
75.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
417 |
2N6489 |
75.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
418 |
2N6490 |
75.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
419 |
2N6491 |
75.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
420 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
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