| No. |
Part Name |
Description |
Manufacturer |
| 391 |
SPX5205M5-2.0/TR |
150mA, Low-Noise LDO Voltage Regulator, 1% |
Sipex Corporation |
| 392 |
SPX5205M5-L-2.0 |
150mA, Low-Noise LDO Voltage Regulator, 1% |
Sipex Corporation |
| 393 |
SPX5205M5-L-2.0/TR |
150mA, Low-Noise LDO Voltage Regulator, 1% |
Sipex Corporation |
| 394 |
TC1017-2.0VCTTR |
Power Management- Linear Regulators |
Microchip |
| 395 |
TC1185-2.0VCT713 |
Power Management- Linear Regulators |
Microchip |
| 396 |
TC54VC2102ECB |
Voltage detector. Detected voltage 2.1V. Output form: CMOS output. Tolerance +-2.0%. |
TelCom Semiconductor |
| 397 |
TC54VC2102EMB |
Voltage detector. Detected voltage 2.1V. Output form: CMOS output. Tolerance +-2.0%. |
TelCom Semiconductor |
| 398 |
TC54VC2102EZB |
Voltage detector. Detected voltage 2.1V. Output form: CMOS output . Tolerance +-2.0%. |
TelCom Semiconductor |
| 399 |
TC54VC2202ECB |
Voltage detector. Detected voltage 2.2V. Output form: CMOS output. Tolerance +-2.0%. |
TelCom Semiconductor |
| 400 |
TC54VC2202EMB |
Voltage detector. Detected voltage 2.2V. Output form: CMOS output. Tolerance +-2.0%. |
TelCom Semiconductor |
| 401 |
TC54VC2202EZB |
Voltage detector. Detected voltage 2.2V. Output form: CMOS output . Tolerance +-2.0%. |
TelCom Semiconductor |
| 402 |
TC54VC2302ECB |
Voltage detector. Detected voltage 2.3V. Output form: CMOS output. Tolerance +-2.0%. |
TelCom Semiconductor |
| 403 |
TC54VC3302EZB |
Voltage detector. Detected voltage 3.3V. Output form: CMOS output . Tolerance +-2.0%. |
TelCom Semiconductor |
| 404 |
TC54VC3502ECB |
Voltage detector. Detected voltage 3.5V. Output form: CMOS output. Tolerance +-2.0%. |
TelCom Semiconductor |
| 405 |
TC54VC3502EMB |
Voltage detector. Detected voltage 3.5V. Output form: CMOS output. Tolerance +-2.0%. |
TelCom Semiconductor |
| 406 |
TC54VC3502EZB |
Voltage detector. Detected voltage 3.5V. Output form: CMOS output . Tolerance +-2.0%. |
TelCom Semiconductor |
| 407 |
TC54VC3602ECB |
Voltage detector. Detected voltage 3.6V. Output form: CMOS output. Tolerance +-2.0%. |
TelCom Semiconductor |
| 408 |
TC54VC3602EMB |
Voltage detector. Detected voltage 3.6V. Output form: CMOS output. Tolerance +-2.0%. |
TelCom Semiconductor |
| 409 |
TC54VC3602EZB |
Voltage detector. Detected voltage 3.6V. Output form: CMOS output . Tolerance +-2.0%. |
TelCom Semiconductor |
| 410 |
TC54VC3702EMB |
Voltage detector. Detected voltage 3.7V. Output form: CMOS output. Tolerance +-2.0%. |
TelCom Semiconductor |
| 411 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 412 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 413 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 414 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 415 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 416 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 417 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 418 |
TCC1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 419 |
TCC1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 420 |
TCC1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
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