| No. |
Part Name |
Description |
Manufacturer |
| 391 |
AT49F1025-45JC |
1-Megabit 64K x 16 5-volt Only Flash Memory |
Atmel |
| 392 |
AT49F1025-45VC |
1-Megabit 64K x 16 5-volt Only Flash Memory |
Atmel |
| 393 |
AT49HF010-45JC |
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 394 |
AT49HF010-45JI |
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 395 |
AT49HF010-45PC |
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 396 |
AT49HF010-45PI |
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 397 |
AT49HF010-45TC |
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 398 |
AT49HF010-45TI |
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 399 |
AT49LV1024A-45VC |
1-megabit (64K x 16) 3-volt Only Flash Memory |
Atmel |
| 400 |
AT49LV1024A-45VL |
1-megabit (64K x 16) 3-volt Only Flash Memory |
Atmel |
| 401 |
AT86RF401 |
Smart RF Wireless Data Transmitter. Highly integrated, low-cost RF transmitter, combined with an AVR RISC Microcontroller. RF Frequency Range of 250-450 MHz |
Atmel |
| 402 |
ATF-45101 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 403 |
ATF-45171 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 404 |
AV9120M-45 |
Low-cost 8-pin frequency generator |
Integrated Circuit Systems |
| 405 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 406 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 407 |
BC557 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 408 |
BC560 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 409 |
BC636 |
Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 410 |
BC636 |
Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 411 |
BC636 |
Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 412 |
BC807-45 |
45V; PNP surface mount transistor. For switching and AF amplifier applications |
Diodes |
| 413 |
BC857AW-G |
Small Signal Transistor, VCBO=-50V, VCEO=-45V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
| 414 |
BC857BW-G |
Small Signal Transistor, VCBO=-50V, VCEO=-45V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
| 415 |
BC857CW-G |
Small Signal Transistor, VCBO=-50V, VCEO=-45V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
| 416 |
BD534 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -45V, 50W. |
General Electric Solid State |
| 417 |
BD796 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V, 65W. |
General Electric Solid State |
| 418 |
BLF6G10-45 |
Power LDMOS transistor |
NXP Semiconductors |
| 419 |
BLF6G10S-45 |
Power LDMOS transistor |
NXP Semiconductors |
| 420 |
BLF6G20-45 |
Power LDMOS transistor |
NXP Semiconductors |
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