| No. |
Part Name |
Description |
Manufacturer |
| 391 |
MAX77178EVKIT# |
High-Bandwidth LTE/WCDMA PA Power Management ICs in a 1.75mm x 1.4mm, 0.4mm Pitch WLP |
MAXIM - Dallas Semiconductor |
| 392 |
MAX77178EWC+ |
High-Bandwidth LTE/WCDMA PA Power Management ICs in a 1.75mm x 1.4mm, 0.4mm Pitch WLP |
MAXIM - Dallas Semiconductor |
| 393 |
MAX77178EWC+ |
High-Bandwidth LTE/WCDMA PA Power Management ICs in a 1.75mm x 1.4mm, 0.4mm Pitch WLP |
MAXIM - Dallas Semiconductor |
| 394 |
MAX77178EWC+T |
High-Bandwidth LTE/WCDMA PA Power Management ICs in a 1.75mm x 1.4mm, 0.4mm Pitch WLP |
MAXIM - Dallas Semiconductor |
| 395 |
MAX77178EWC+T |
High-Bandwidth LTE/WCDMA PA Power Management ICs in a 1.75mm x 1.4mm, 0.4mm Pitch WLP |
MAXIM - Dallas Semiconductor |
| 396 |
MAX77179 |
High-Bandwidth LTE/WCDMA PA Power Management ICs in a 1.75mm x 1.4mm, 0.4mm Pitch WLP |
MAXIM - Dallas Semiconductor |
| 397 |
MAX77179 |
High-Bandwidth LTE/WCDMA PA Power Management ICs in a 1.75mm x 1.4mm, 0.4mm Pitch WLP |
MAXIM - Dallas Semiconductor |
| 398 |
MAX77179EWC+ |
High-Bandwidth LTE/WCDMA PA Power Management ICs in a 1.75mm x 1.4mm, 0.4mm Pitch WLP |
MAXIM - Dallas Semiconductor |
| 399 |
MAX77179EWC+ |
High-Bandwidth LTE/WCDMA PA Power Management ICs in a 1.75mm x 1.4mm, 0.4mm Pitch WLP |
MAXIM - Dallas Semiconductor |
| 400 |
MAX77179EWC+T |
High-Bandwidth LTE/WCDMA PA Power Management ICs in a 1.75mm x 1.4mm, 0.4mm Pitch WLP |
MAXIM - Dallas Semiconductor |
| 401 |
MAX77179EWC+T |
High-Bandwidth LTE/WCDMA PA Power Management ICs in a 1.75mm x 1.4mm, 0.4mm Pitch WLP |
MAXIM - Dallas Semiconductor |
| 402 |
MMBZ5247B |
Surface mount zener diode. Nominal zener voltage 17.0V, test current 7.4mA. |
Jinan Gude Electronic Device |
| 403 |
NTE5103A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 180V. Zener test current Izt = 1.4mA. |
NTE Electronics |
| 404 |
PS2761 |
Photocoupler with 0.4mm insulation distance(LED: DC input) |
NEC |
| 405 |
PS2761-1-E3 |
Photocoupler with 0.4mm insulation distance(LED: DC input) |
NEC |
| 406 |
PS2761-1-E4 |
Photocoupler with 0.4mm insulation distance(LED: DC input) |
NEC |
| 407 |
PS2765 |
Photocoupler with 0.4mm insulation distance(LED: AC input) |
NEC |
| 408 |
PS2765-1-E3 |
Photocoupler with 0.4mm insulation distance(LED: AC input) |
NEC |
| 409 |
PS2765-1-E4 |
Photocoupler with 0.4mm insulation distance(LED: AC input) |
NEC |
| 410 |
RD2.4M |
ZENER DIODES 200 mW 3-PIN MINI MOLD |
NEC |
| 411 |
RD2.4M-L |
Constant Voltage diode 200mW 3pin SC-59 |
NEC |
| 412 |
RD2.4M-T1B |
Constant Voltage diode 200mW 3pin SC-59 |
NEC |
| 413 |
RD2.4M-T2B |
Constant Voltage diode 200mW 3pin SC-59 |
NEC |
| 414 |
RD2.4MW |
ZENER DIODES 200 mW 3-PIN MINI MOLD |
NEC |
| 415 |
SPD30N03S2L-10 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL |
Infineon |
| 416 |
SPD50N03S2L-06 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.4mOhm, 50A, LL |
Infineon |
| 417 |
SPI73N03S2L-08 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 8.4mOhm, 73A, LL |
Infineon |
| 418 |
SPP73N03S2L-08 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 8.4mOhm, 73A, LL |
Infineon |
| 419 |
SPP80N04S2L-03 |
Low Voltage MOSFETs - TO220/263; 80A; 40V; LL; 3.4mOhm |
Infineon |
| 420 |
STU90N4F3 |
N-channel 40V - 5.4m Ohm - 80A - DPAK - TO-220 - IPAK |
ST Microelectronics |
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