| No. |
Part Name |
Description |
Manufacturer |
| 391 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 392 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 393 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 394 |
30KW168 |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 395 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 396 |
30KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 397 |
30KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 398 |
30KW198 |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 399 |
30KW198A |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 400 |
30KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 401 |
30KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 402 |
30KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 403 |
30KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 404 |
30KW258 |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 405 |
30KW258A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 406 |
30KW270 |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 407 |
30KW270A |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 408 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 409 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 410 |
30SMCJ |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 411 |
3KP |
3000W TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 412 |
3KP10 |
3000Watts Transient Voltage Suppressor 5.0 to 170 Volts |
Micro Commercial Components |
| 413 |
3KP10 |
3000W TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 414 |
3KP100 |
Ppk=3000W, Vc=179V transient voltage suppressor |
MCC |
| 415 |
3KP100 |
3000Watts Transient Voltage Suppressor 5.0 to 170 Volts |
Micro Commercial Components |
| 416 |
3KP100 |
3000W TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 417 |
3KP100A |
Ppk=3000W, Vc=162V transient voltage suppressor |
MCC |
| 418 |
3KP100A |
3000Watts Transient Voltage Suppressor 5.0 to 170 Volts |
Micro Commercial Components |
| 419 |
3KP100A |
3000W TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 420 |
3KP100A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=3000Watts, VRWM=100V, Tolerance=5% |
Comchip Technology |
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