| No. |
Part Name |
Description |
Manufacturer |
| 391 |
NX8562LB695-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1569.59 nm. Frequency 191.00 THz. Anode ground. FC-PC connector. |
NEC |
| 392 |
NX8562LF695-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1569.56 nm. Frequency 191.00 THz. Anode floating. FC-PC connector. |
NEC |
| 393 |
NX8563LB695-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1569.59 nm. Frequency 191.00 THz. FC-PC connector. Anode ground. |
NEC |
| 394 |
NX8563LF695-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1569.59 nm. Frequency 191.00 THz. FC-PC connector. Anode floating. |
NEC |
| 395 |
P4KE100 |
81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 396 |
P4KE100-T3 |
Reverse stand-off voltage: 81.00V transient voltage suppressor |
Won-Top Electronics |
| 397 |
P4KE100-TB |
Reverse stand-off voltage: 81.00V transient voltage suppressor |
Won-Top Electronics |
| 398 |
P4KE100C |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 81.00 V. Test current IT = 1 mA. |
Bytes |
| 399 |
P4KE100C |
81.00V; 400W transient voltage suppressor |
Diodes |
| 400 |
P4KE100C-T3 |
Reverse stand-off voltage: 81.00V transient voltage suppressor |
Won-Top Electronics |
| 401 |
P4KE100C-TB |
Reverse stand-off voltage: 81.00V transient voltage suppressor |
Won-Top Electronics |
| 402 |
P4KE130A |
111.00V; 400W transient voltage suppressor |
Diodes |
| 403 |
P4KE130A |
111.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 404 |
P4KE130A-T3 |
Reverse stand-off voltage: 111.00V transient voltage suppressor |
Won-Top Electronics |
| 405 |
P4KE130A-TB |
Reverse stand-off voltage: 111.00V transient voltage suppressor |
Won-Top Electronics |
| 406 |
P4KE130CA |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 111.00 V. Test current IT = 1 mA. |
Bytes |
| 407 |
P4KE130CA |
111.00V; 400W transient voltage suppressor |
Diodes |
| 408 |
P4KE130CA |
Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 111.00V, Vbr(min/max) = 124.00/137.00V, It = 1 mA. |
Panjit International Inc |
| 409 |
P4KE130CA-T3 |
Reverse stand-off voltage: 111.00V transient voltage suppressor |
Won-Top Electronics |
| 410 |
P4KE130CA-TB |
Reverse stand-off voltage: 111.00V transient voltage suppressor |
Won-Top Electronics |
| 411 |
P4KE150 |
121.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 412 |
P4KE150-T3 |
Reverse stand-off voltage: 121.00V transient voltage suppressor |
Won-Top Electronics |
| 413 |
P4KE150-TB |
Reverse stand-off voltage: 121.00V transient voltage suppressor |
Won-Top Electronics |
| 414 |
P4KE150C |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 121.00 V. Test current IT = 1 mA. |
Bytes |
| 415 |
P4KE150C-T3 |
Reverse stand-off voltage: 121.00V transient voltage suppressor |
Won-Top Electronics |
| 416 |
P4KE150C-TB |
Reverse stand-off voltage: 121.00V transient voltage suppressor |
Won-Top Electronics |
| 417 |
P4KE200A |
171.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 418 |
P4KE200CA |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 171.00 V. Test current IT = 1 mA. |
Bytes |
| 419 |
P4KE200CA |
171.00V; 400W transient voltage suppressor |
Diodes |
| 420 |
P6KE100 |
81.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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