| No. |
Part Name |
Description |
Manufacturer |
| 391 |
MAS9275C2TG00 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
| 392 |
MAS9275C3SM06 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
| 393 |
MAS9275C3TG00 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
| 394 |
MAS9275C4SM06 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
| 395 |
MAS9275C4TG00 |
IC FOR 10.00 - 36.00 MHz VCXO |
etc |
| 396 |
MAX20-110.0C |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 397 |
MAX20-110.0C |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 398 |
MAX20-110.0CA |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 399 |
MAX20-110.0CA |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 400 |
MAX40-110.0C |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 401 |
MAX40-110.0C |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 402 |
MAX40-110.0CA |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 403 |
MAX40-110.0CA |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 404 |
MJE2955T |
75.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 10.000A Ic, 5 hFE. |
Continental Device India Limited |
| 405 |
MM3Z10VB |
10.0V 200mW 2% Zener, SOD323F |
Fairchild Semiconductor |
| 406 |
MM3Z10VC |
10.0V 200mW 5% Zener, SOD323F |
Fairchild Semiconductor |
| 407 |
MMBZ5240B |
Surface mount zener diode. Nominal zener voltage 10.0V, test current 20.0mA. |
Jinan Gude Electronic Device |
| 408 |
MQF10.0-0320/03 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
| 409 |
MQF10.0-0760/01 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
| 410 |
MQF10.0-1600/04 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
| 411 |
MQF10.0-1900/04 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
| 412 |
MTP75N06HD |
TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS |
Motorola |
| 413 |
MV1624 |
Silicon Epicap diode, epitaxial passivated tuning diode designed for AFC applications in radio, TV, 10.0pF |
Motorola |
| 414 |
MV1866A |
Silicon Epicap diode designed for electronic tuning and control applications in the UHF and lower microwave frequency 10.0pF |
Motorola |
| 415 |
MV1866B |
Silicon Epicap diode designed for electronic tuning and control applications in the UHF and lower microwave frequency 10.0pF |
Motorola |
| 416 |
MV1866D |
Silicon Epicap diode designed for electronic tuning and control applications in the UHF and lower microwave frequency 10.0pF |
Motorola |
| 417 |
MV2103 |
Voltage-Variable Capacitance Silicon EPICAP Diode, 30 Volts 10.0pF |
Motorola |
| 418 |
MXD210AC |
Low cost, 10.0g, dual axis accelerometer with analog outputs. |
MEMSIC |
| 419 |
MXD210AL |
Low cost, 10.0g, dual axis accelerometer with analog outputs. |
MEMSIC |
| 420 |
NTE140A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 10.0V. Zener test current Izt = 25.0mA. |
NTE Electronics |
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