No. |
Part Name |
Description |
Manufacturer |
391 |
3EZ190 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
392 |
3EZ20 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
393 |
3EZ200 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
394 |
3EZ22 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
395 |
3EZ24 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
396 |
3EZ27 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
397 |
3EZ28 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
398 |
3EZ33 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
399 |
3EZ36 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
400 |
3EZ39 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
401 |
3EZ43 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
402 |
3EZ47 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
403 |
3EZ51 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
404 |
3EZ56 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
405 |
3EZ62 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
406 |
3EZ68 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
407 |
3EZ75 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
408 |
3EZ82 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
409 |
3EZ91 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
410 |
4AM11 (NCH/PCH) |
FET Arrays |
Hitachi Semiconductor |
411 |
5082-7611 |
5082-7611 · 7.6 mm (0.3 inch) Seven Segment Displays |
Agilent (Hewlett-Packard) |
412 |
5962-9064202Q2A |
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. |
Texas Instruments |
413 |
5962-9064202QRA |
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. |
Texas Instruments |
414 |
5962-9688601QRA |
12-Bit 66 kSPS ADC Ser. Out, Pgrmable MSB/LSB First, Pgrmable Power Down/Output Data Length, 11 Ch. |
Texas Instruments |
415 |
5962-9688601QRA |
12-Bit 66 kSPS ADC Ser. Out, Pgrmable MSB/LSB First, Pgrmable Power Down/Output Data Length, 11 Ch. |
Texas Instruments |
416 |
5962-9688601QRA |
12-Bit 66 kSPS ADC Ser. Out, Pgrmable MSB/LSB First, Pgrmable Power Down/Output Data Length, 11 Ch. |
Texas Instruments |
417 |
5962-9689401Q2A |
10-Bit 200 kSPS ADC Ser. Out, Built-In Self-Test Modes, Inherent S&H, Pin Compat. w/TLC1543, 11 Ch. |
Texas Instruments |
418 |
5962-9689401QRA |
10-Bit 200 kSPS ADC Ser. Out, Built-In Self-Test Modes, Inherent S&H, Pin Compat. w/TLC1543, 11 Ch. |
Texas Instruments |
419 |
5KP100 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
420 |
5KP100A |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 123 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
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