| No. |
Part Name |
Description |
Manufacturer |
| 391 |
DAC1600KP-V |
MONOLITHIC 16 BIT RESOLUTION DIGITAL - TO - ANALOG CONVERTER |
Burr Brown |
| 392 |
DAC3282 |
Dual 16 bit 625MSPS Communications DAC |
Texas Instruments |
| 393 |
DAC3282IRGZR |
Dual 16 bit 625MSPS Communications DAC 48-VQFN -40 to 85 |
Texas Instruments |
| 394 |
DAC3282IRGZT |
Dual 16 bit 625MSPS Communications DAC 48-VQFN -40 to 85 |
Texas Instruments |
| 395 |
DAC3283 |
Dual 16 bit 800MSPS Communications DAC |
Texas Instruments |
| 396 |
DAC3283IRGZR |
Dual 16 bit 800MSPS Communications DAC 48-VQFN -40 to 85 |
Texas Instruments |
| 397 |
DAC3283IRGZT |
Dual 16 bit 800MSPS Communications DAC 48-VQFN -40 to 85 |
Texas Instruments |
| 398 |
DAC5686 |
16 Bit 500 MSPS Dual DAC, 16x interpolation, high-performance |
Texas Instruments |
| 399 |
DAC5686IPZP |
16 Bit 500 MSPS Dual DAC, 16x interpolation, high-performance |
Texas Instruments |
| 400 |
DAC5686IPZPG4 |
16 Bit 500 MSPS Dual DAC, 16x interpolation, high-performance 100-HTQFP -40 to 85 |
Texas Instruments |
| 401 |
DM134B |
16 BIT CONSTANT CURRENT LED DRIVERS WITH 3.3V-5V SUPPLY VOLTAGE |
etc |
| 402 |
DM135B |
16 BIT CONSTANT CURRENT LED DRIVERS WITH 3.3V-5V SUPPLY VOLTAGE |
etc |
| 403 |
DS_K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 404 |
DS_K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 405 |
DS_K6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 406 |
DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 407 |
DS_K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 408 |
DS_K6F4016U6G |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 409 |
DS_K6F8016U6B |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 410 |
DS_K6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 411 |
GM71C18163AJ-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
| 412 |
GM71C18163AJ-7 |
1,048,576 words x 16 bit DRAM, 70ns |
LG Semiconductor |
| 413 |
GM71C18163AJ-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
| 414 |
GM71C18163AT-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
| 415 |
GM71C18163AT-7 |
1,048,576 words x 16 bit DRAM, 70ns |
LG Semiconductor |
| 416 |
GM71C18163AT-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
| 417 |
GM71C18163C |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 418 |
GM71C18163C-5 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 419 |
GM71C18163C-6 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 420 |
GM71C18163C-7 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
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