| No. |
Part Name |
Description |
Manufacturer |
| 391 |
DG418LDY+T |
35Ω SPST/SPDT, +3V Logic-Compatible Analog Switches |
MAXIM - Dallas Semiconductor |
| 392 |
DG418LEUA |
35Ω SPST/SPDT, +3V Logic-Compatible Analog Switches |
MAXIM - Dallas Semiconductor |
| 393 |
DG418LEUA+ |
35Ω SPST/SPDT, +3V Logic-Compatible Analog Switches |
MAXIM - Dallas Semiconductor |
| 394 |
DG418LEUA+T |
35Ω SPST/SPDT, +3V Logic-Compatible Analog Switches |
MAXIM - Dallas Semiconductor |
| 395 |
DG418LEUA-T |
35Ω SPST/SPDT, +3V Logic-Compatible Analog Switches |
MAXIM - Dallas Semiconductor |
| 396 |
DMC3018LSD |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
| 397 |
DMC3018LSD-13 |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
| 398 |
DMG3418L |
Discrete - MOSFETs - MOSFET Master Table - N Channel - N Channel 30V |
Diodes |
| 399 |
DMG3418L-13 |
Discrete - MOSFETs - MOSFET Master Table - N Channel - N Channel 30V |
Diodes |
| 400 |
DMG3418L-7 |
Discrete - MOSFETs - MOSFET Master Table - N Channel - N Channel 30V |
Diodes |
| 401 |
DMP2018LFK |
P-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 402 |
DMP2018LFK-7 |
P-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 403 |
DMPAL18L4 |
Progammable Array Logic Series 24 (PAL Series 24) |
National Semiconductor |
| 404 |
ESABR246-80G3-12V-018L |
Relays |
Microsemi |
| 405 |
FM18L08 |
256Kb 2.7-3.6V Bytewide FRAM Memory |
Ramtron International |
| 406 |
FM18L08-70-P |
256Kb 2.7-3.6V Bytewide FRAM Memory |
Ramtron International |
| 407 |
FM18L08-70-S |
256Kb 2.7-3.6V Bytewide FRAM Memory |
Ramtron International |
| 408 |
G618L |
T-1, (3-mm) Round, PCB Mount Right Angle Array, G61XL Series |
etc |
| 409 |
H2N6718L |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 410 |
HT18LG |
Electronic Telephone Line Switch |
Supertex Inc |
| 411 |
HYB18L128160BC-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 412 |
HYB18L128160BC-75 |
DRAMs for Mobile Applications |
Infineon |
| 413 |
HYB18L128160BF |
DRAMs for Mobile Applications |
Infineon |
| 414 |
HYB18L128160BF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 415 |
HYB18L128160BF-75 |
DRAMs for Mobile Applications |
Infineon |
| 416 |
HYB18L256160BC-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 417 |
HYB18L256160BC-75 |
DRAMs for Mobile Applications |
Infineon |
| 418 |
HYB18L256160BF |
DRAMs for Mobile Applications |
Infineon |
| 419 |
HYB18L256160BF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 420 |
HYB18L256160BF-75 |
DRAMs for Mobile Applications |
Infineon |
| | | |
